Inui, F., Gao, B., Nakano, S., & Kakimoto, K. (2012). Numerical analysis of the velocity of SiC growth by the top seeding method. Journal of Crystal Growth, 348(1), 71. https://doi.org/10.1016/j.jcrysgro.2012.03.036
Chicago Style (17th ed.) CitationInui, F., B. Gao, S. Nakano, and K. Kakimoto. "Numerical Analysis of the Velocity of SiC Growth by the Top Seeding Method." Journal of Crystal Growth 348, no. 1 (2012): 71. https://doi.org/10.1016/j.jcrysgro.2012.03.036.
MLA (9th ed.) CitationInui, F., et al. "Numerical Analysis of the Velocity of SiC Growth by the Top Seeding Method." Journal of Crystal Growth, vol. 348, no. 1, 2012, p. 71, https://doi.org/10.1016/j.jcrysgro.2012.03.036.
Warning: These citations may not always be 100% accurate.