Numerical analysis of the velocity of SiC growth by the top seeding method
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| Title: | Numerical analysis of the velocity of SiC growth by the top seeding method |
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| Authors: | Inui, F.1, Gao, B.1, Nakano, S.1, Kakimoto, K. kakimoto@riam.kyushu-u.ac.jp |
| Source: | Journal of Crystal Growth. Jun2012, Vol. 348 Issue 1, p71-74. 4p. |
| Subjects: | Numerical analysis, Silicon carbide, Metal crystal growth, Phase diagrams, Temperature measurements, Temperature distribution, Temperature effect |
| Abstract: | Abstract: Velocity of crystal growth of SiC in a process of solution growth was studied on the basis of a global model of heat and mass transfer in conjunction with a phase diagram of the Si–C system. The growth rate was estimated by flux of carbon to a seed crystal. The results of calculation showed that growth velocity was increased when temperature of a seed crystal was increased. The temperature dependence of growth velocity was mainly determined by the phase diagram of the Si–C system, although the flow pattern was slightly modified by changing temperature distribution in the furnace. [Copyright &y& Elsevier] |
| Copyright of Journal of Crystal Growth is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
| FullText | Text: Availability: 0 |
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| Header | DbId: egs DbLabel: Engineering Source An: 75171053 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Numerical analysis of the velocity of SiC growth by the top seeding method – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Inui%2C+F%2E%22">Inui, F.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Gao%2C+B%2E%22">Gao, B.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Nakano%2C+S%2E%22">Nakano, S.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Kakimoto%2C+K%2E%22">Kakimoto, K.</searchLink><i> kakimoto@riam.kyushu-u.ac.jp</i> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Journal+of+Crystal+Growth%22">Journal of Crystal Growth</searchLink>. Jun2012, Vol. 348 Issue 1, p71-74. 4p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Numerical+analysis%22">Numerical analysis</searchLink><br /><searchLink fieldCode="DE" term="%22Silicon+carbide%22">Silicon carbide</searchLink><br /><searchLink fieldCode="DE" term="%22Metal+crystal+growth%22">Metal crystal growth</searchLink><br /><searchLink fieldCode="DE" term="%22Phase+diagrams%22">Phase diagrams</searchLink><br /><searchLink fieldCode="DE" term="%22Temperature+measurements%22">Temperature measurements</searchLink><br /><searchLink fieldCode="DE" term="%22Temperature+distribution%22">Temperature distribution</searchLink><br /><searchLink fieldCode="DE" term="%22Temperature+effect%22">Temperature effect</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: Abstract: Velocity of crystal growth of SiC in a process of solution growth was studied on the basis of a global model of heat and mass transfer in conjunction with a phase diagram of the Si–C system. The growth rate was estimated by flux of carbon to a seed crystal. The results of calculation showed that growth velocity was increased when temperature of a seed crystal was increased. The temperature dependence of growth velocity was mainly determined by the phase diagram of the Si–C system, although the flow pattern was slightly modified by changing temperature distribution in the furnace. [Copyright &y& Elsevier] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Journal of Crystal Growth is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1016/j.jcrysgro.2012.03.036 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 4 StartPage: 71 Subjects: – SubjectFull: Numerical analysis Type: general – SubjectFull: Silicon carbide Type: general – SubjectFull: Metal crystal growth Type: general – SubjectFull: Phase diagrams Type: general – SubjectFull: Temperature measurements Type: general – SubjectFull: Temperature distribution Type: general – SubjectFull: Temperature effect Type: general Titles: – TitleFull: Numerical analysis of the velocity of SiC growth by the top seeding method Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Inui, F. – PersonEntity: Name: NameFull: Gao, B. – PersonEntity: Name: NameFull: Nakano, S. – PersonEntity: Name: NameFull: Kakimoto, K. IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 06 Text: Jun2012 Type: published Y: 2012 Identifiers: – Type: issn-print Value: 00220248 Numbering: – Type: volume Value: 348 – Type: issue Value: 1 Titles: – TitleFull: Journal of Crystal Growth Type: main |
| ResultId | 1 |
