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Effects of Mn doping on structural and dielectric properties of sol–gel-derived (Ba0.835Ca0.165)(Zr0.09Ti0.91)O3 thin films

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Title: Effects of Mn doping on structural and dielectric properties of sol–gel-derived (Ba0.835Ca0.165)(Zr0.09Ti0.91)O3 thin films
Authors: Lin, Yanting1, Miao, Xinrui2, Qin, Ni1, Zhou, Hong1, Deng, Wenli2, Bao, Dinghua1 stsbdh@mail.sysu.edu.cn
Source: Thin Solid Films. Jun2012, Vol. 520 Issue 16, p5146-5150. 5p.
Subjects: Titanium oxides, Thin films, Electric properties of metals, Sol-gel processes, Scanning electron microscopy, Microwave devices, Particle size distribution
Abstract: Abstract: We reported the effects of Mn doping on the structure and dielectric properties of (Ba0.835Ca0.165)(Zr0.09Ti0.91)O3 (BCZT) thin films prepared by sol–gel method. The (Ba0.835Ca0.165)Mnx(Zr0.09Ti0.91)1−xO3 (x=0, 0.002, 0.005, and 0.01) thin films exhibited a pure pseudo-cubic perovskite structure with random orientation. Scanning electron microscopy and atomic force microscopy observation showed that increasing Mn-doping amount caused a decrease in particle size and a cluster of the particles, while the film surface remained smooth and crack-free. Compared with the undoped film, Mn doped BCZT thin films exhibited smaller dielectric constant and lower dielectric loss. The figure of merit reached the maximum value of 16.7 with a tunability of 53.6% for the film with 0.5mol% Mn doping, when a bias electric field of 400kV/cm was applied at 100kHz. The results indicated that the Mn doped BCZT thin films are suitable for tunable microwave device applications. [Copyright &y& Elsevier]
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Database: Engineering Source
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Abstract:Abstract: We reported the effects of Mn doping on the structure and dielectric properties of (Ba0.835Ca0.165)(Zr0.09Ti0.91)O3 (BCZT) thin films prepared by sol–gel method. The (Ba0.835Ca0.165)Mnx(Zr0.09Ti0.91)1−xO3 (x=0, 0.002, 0.005, and 0.01) thin films exhibited a pure pseudo-cubic perovskite structure with random orientation. Scanning electron microscopy and atomic force microscopy observation showed that increasing Mn-doping amount caused a decrease in particle size and a cluster of the particles, while the film surface remained smooth and crack-free. Compared with the undoped film, Mn doped BCZT thin films exhibited smaller dielectric constant and lower dielectric loss. The figure of merit reached the maximum value of 16.7 with a tunability of 53.6% for the film with 0.5mol% Mn doping, when a bias electric field of 400kV/cm was applied at 100kHz. The results indicated that the Mn doped BCZT thin films are suitable for tunable microwave device applications. [Copyright &y& Elsevier]
ISSN:00406090
DOI:10.1016/j.tsf.2012.03.132