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Physical and electrical properties of thin films produced by Low Energy Cluster Beam Deposition of mixed InxSb1−x clusters

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Title: Physical and electrical properties of thin films produced by Low Energy Cluster Beam Deposition of mixed InxSb1−x clusters
Authors: Besson, D.1 dbesson@dpm.univ-lyonl.fr, Treilleux, M.1, Hoareau, A.1, Esnouf, C.2
Source: Materials Science & Engineering: B. Mar2002, Vol. 90 Issue 3, p213. 11p.
Subjects: Thin films, Indium antimonide crystals, Nanostructures
Abstract: We present a new gas-aggregation cluster source with two independent crucibles, one for indium and another one for antimony. This source was used to produce mixed InxSb1−x clusters in the nanometer range size (typically 4 nm), which were deposited at room temperature on amorphous carbon or glass substrates by low energy cluster beam deposition technique (LECBD). The film composition was analysed by energy dispersive X-ray (EDX) spectroscopy. The morphology and structure of the films were studied by transmission electron microscopy (conventional and high resolution) and selected area electron diffraction (SAED) at different compositions. Semiconducting InSb clusters could be produced by controlling the temperature of the two crucibles. The electrical properties of the films were studied at a film thickness of 20 nm. The conductivity versus temperature appeared to be thermally activated for all compositions. [Copyright &y& Elsevier]
Copyright of Materials Science & Engineering: B is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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DbLabel: Engineering Source
An: 7762189
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
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  Data: Physical and electrical properties of thin films produced by Low Energy Cluster Beam Deposition of mixed In<subscript>x</subscript>Sb<subscript>1−x</subscript> clusters
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  Data: <searchLink fieldCode="AR" term="%22Besson%2C+D%2E%22">Besson, D.</searchLink><relatesTo>1</relatesTo><i> dbesson@dpm.univ-lyonl.fr</i><br /><searchLink fieldCode="AR" term="%22Treilleux%2C+M%2E%22">Treilleux, M.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Hoareau%2C+A%2E%22">Hoareau, A.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Esnouf%2C+C%2E%22">Esnouf, C.</searchLink><relatesTo>2</relatesTo>
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  Data: <searchLink fieldCode="JN" term="%22Materials+Science+%26+Engineering%3A+B%22">Materials Science & Engineering: B</searchLink>. Mar2002, Vol. 90 Issue 3, p213. 11p.
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  Data: <searchLink fieldCode="DE" term="%22Thin+films%22">Thin films</searchLink><br /><searchLink fieldCode="DE" term="%22Indium+antimonide+crystals%22">Indium antimonide crystals</searchLink><br /><searchLink fieldCode="DE" term="%22Nanostructures%22">Nanostructures</searchLink>
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  Label: Abstract
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  Data: We present a new gas-aggregation cluster source with two independent crucibles, one for indium and another one for antimony. This source was used to produce mixed InxSb1−x clusters in the nanometer range size (typically 4 nm), which were deposited at room temperature on amorphous carbon or glass substrates by low energy cluster beam deposition technique (LECBD). The film composition was analysed by energy dispersive X-ray (EDX) spectroscopy. The morphology and structure of the films were studied by transmission electron microscopy (conventional and high resolution) and selected area electron diffraction (SAED) at different compositions. Semiconducting InSb clusters could be produced by controlling the temperature of the two crucibles. The electrical properties of the films were studied at a film thickness of 20 nm. The conductivity versus temperature appeared to be thermally activated for all compositions. [Copyright &y& Elsevier]
– Name: AbstractSuppliedCopyright
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  Group: Ab
  Data: <i>Copyright of Materials Science & Engineering: B is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1016/S0921-5107(01)00715-2
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      – Code: eng
        Text: English
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        PageCount: 11
        StartPage: 213
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      – SubjectFull: Thin films
        Type: general
      – SubjectFull: Indium antimonide crystals
        Type: general
      – SubjectFull: Nanostructures
        Type: general
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      – TitleFull: Physical and electrical properties of thin films produced by Low Energy Cluster Beam Deposition of mixed InxSb1−x clusters
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              Text: Mar2002
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              Y: 2002
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