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Optical and structural characterization of LP MOVPE grown lattice matched InGaP/GaAs heterostructures

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Title: Optical and structural characterization of LP MOVPE grown lattice matched InGaP/GaAs heterostructures
Authors: Attolini, G.1, Scardova, S.1, Germini, F.1, Pelosi, C.1, Martınez, O.2, Sanz, L.F.2, González, M.A.2, Jiménez, J.2
Source: Materials Science & Engineering: B. Apr2002, Vol. 91/92, p123. 5p.
Subjects: Alloys, Photoluminescence
Abstract: Lattice matched InGaP alloys grown by Low Pressure Metal Organic Vapor Phase Epitaxy were studied by Atomic Force Microscopy, X-ray diffraction, microRaman spectroscopy and Photoluminescence mapping. The study is devoted to the analysis of both the composition fluctuations and spontaneous CuPt-type order. N-type (Si-doped) and semi-insulating substrates were used. Order seems to occur in a higher amount in layers grown on Si-doped substrates; the morphology and the properties of the layers are shown to depend on the type of substrate. The Raman study of the layers allows to establish the influence of CuPt-type order on the Raman spectrum of lattice matched InGaP. The relation between the Raman parameters and the spontaneous CuPt-type order is discussed. [Copyright &y& Elsevier]
Copyright of Materials Science & Engineering: B is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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DbLabel: Engineering Source
An: 7768735
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PubTypeId: academicJournal
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  Data: Optical and structural characterization of LP MOVPE grown lattice matched InGaP/GaAs heterostructures
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  Data: <searchLink fieldCode="JN" term="%22Materials+Science+%26+Engineering%3A+B%22">Materials Science & Engineering: B</searchLink>. Apr2002, Vol. 91/92, p123. 5p.
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  Label: Abstract
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  Data: Lattice matched InGaP alloys grown by Low Pressure Metal Organic Vapor Phase Epitaxy were studied by Atomic Force Microscopy, X-ray diffraction, microRaman spectroscopy and Photoluminescence mapping. The study is devoted to the analysis of both the composition fluctuations and spontaneous CuPt-type order. N-type (Si-doped) and semi-insulating substrates were used. Order seems to occur in a higher amount in layers grown on Si-doped substrates; the morphology and the properties of the layers are shown to depend on the type of substrate. The Raman study of the layers allows to establish the influence of CuPt-type order on the Raman spectrum of lattice matched InGaP. The relation between the Raman parameters and the spontaneous CuPt-type order is discussed. [Copyright &y& Elsevier]
– Name: AbstractSuppliedCopyright
  Label:
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  Data: <i>Copyright of Materials Science & Engineering: B is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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