View in EDS

Zinc oxide thin film transistors with Schottky source barriers

Saved in:
Bibliographic Details
Title: Zinc oxide thin film transistors with Schottky source barriers
Authors: Ma, Alex M.1, Gupta, Manisha1, Chowdhury, Fatema Rezwana1, Shen, Mei1, Bothe, Kyle1, Shankar, Karthik1, Tsui, Ying1, Barlage, Douglas W. barlage@ualberta.ca
Source: Solid-State Electronics. Oct2012, Vol. 76, p104-108. 5p.
Subjects: Zinc oxide thin films, Schottky barrier, Field-effect transistors, Pulsed laser deposition, Temperature effect, Electric potential, Thermionic emission, Quantum tunneling
Abstract: Abstract: Schottky barrier field effect transistors (SB FETs) with Schottky source injection barrier contacts are fabricated using zinc oxide (ZnO) thin films deposited by pulsed laser deposition at room temperature. In these devices, we utilize a gold Schottky barrier for the source and an aluminum ohmic metal for the drain contacts. The transistors exhibit field effect mobilities as high as 0.1cm2 V−1 s−1, a current on/off ratio of 105, and a low saturation voltage of 6V. When using ohmic source and drain contacts, transistor characteristics are not observed. Furthermore, the devices’ transconductance- and capacitance–voltage characteristics show a transition in the dominant carrier injection mechanism at the source barrier from thermionic emission to tunneling at a gate bias of approximately 8V. These results demonstrate the promise of the Schottky source barrier FET architecture for building ZnO-based transistors. [Copyright &y& Elsevier]
Copyright of Solid-State Electronics is the property of Pergamon Press - An Imprint of Elsevier Science and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
Description
Abstract:Abstract: Schottky barrier field effect transistors (SB FETs) with Schottky source injection barrier contacts are fabricated using zinc oxide (ZnO) thin films deposited by pulsed laser deposition at room temperature. In these devices, we utilize a gold Schottky barrier for the source and an aluminum ohmic metal for the drain contacts. The transistors exhibit field effect mobilities as high as 0.1cm2 V−1 s−1, a current on/off ratio of 105, and a low saturation voltage of 6V. When using ohmic source and drain contacts, transistor characteristics are not observed. Furthermore, the devices’ transconductance- and capacitance–voltage characteristics show a transition in the dominant carrier injection mechanism at the source barrier from thermionic emission to tunneling at a gate bias of approximately 8V. These results demonstrate the promise of the Schottky source barrier FET architecture for building ZnO-based transistors. [Copyright &y& Elsevier]
ISSN:00381101
DOI:10.1016/j.sse.2012.05.005