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Electron beam photoresists for nanoimprint lithography

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Title: Electron beam photoresists for nanoimprint lithography
Authors: Gourgon, C. cgourgon@cea.fr, Perret, C.1, Micouin, G.1
Source: Microelectronic Engineering. Jul2002, Vol. 61/62, p385. 8p.
Subjects: Lithography, Polymers, Nanotechnology
Abstract: Polymer selection and critical dimension (CD) pattern uniformity across the wafer are key parameters for the nanoimprint lithography technique. This nanotechnology requires polymers having a low glass transition temperature (Tg) combined with a good etch resistance. The printing of a commercial E-beam photoresist is studied as a function of the pressing conditions and the pattern density on the wafer. The influence of the printing temperature is analyzed in order to understand the polymer behaviour during the printing process. The residual thickness uniformity across the wafer after pressing has been carefully studied and correlated to the thermal properties of the polymer. Our results show that high resolution resists are well adapted to obtain dense nanostructures with a good CD control. [Copyright &y& Elsevier]
Copyright of Microelectronic Engineering is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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Header DbId: egs
DbLabel: Engineering Source
An: 7817669
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Electron beam photoresists for nanoimprint lithography
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  Data: <searchLink fieldCode="AR" term="%22Gourgon%2C+C%2E%22">Gourgon, C.</searchLink><i> cgourgon@cea.fr</i><br /><searchLink fieldCode="AR" term="%22Perret%2C+C%2E%22">Perret, C.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Micouin%2C+G%2E%22">Micouin, G.</searchLink><relatesTo>1</relatesTo>
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  Data: <searchLink fieldCode="JN" term="%22Microelectronic+Engineering%22">Microelectronic Engineering</searchLink>. Jul2002, Vol. 61/62, p385. 8p.
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  Data: <searchLink fieldCode="DE" term="%22Lithography%22">Lithography</searchLink><br /><searchLink fieldCode="DE" term="%22Polymers%22">Polymers</searchLink><br /><searchLink fieldCode="DE" term="%22Nanotechnology%22">Nanotechnology</searchLink>
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  Label: Abstract
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  Data: Polymer selection and critical dimension (CD) pattern uniformity across the wafer are key parameters for the nanoimprint lithography technique. This nanotechnology requires polymers having a low glass transition temperature (<F>Tg</F>) combined with a good etch resistance. The printing of a commercial E-beam photoresist is studied as a function of the pressing conditions and the pattern density on the wafer. The influence of the printing temperature is analyzed in order to understand the polymer behaviour during the printing process. The residual thickness uniformity across the wafer after pressing has been carefully studied and correlated to the thermal properties of the polymer. Our results show that high resolution resists are well adapted to obtain dense nanostructures with a good CD control. [Copyright &y& Elsevier]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Microelectronic Engineering is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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      – Type: doi
        Value: 10.1016/S0167-9317(02)00429-X
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      – Code: eng
        Text: English
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      – SubjectFull: Nanotechnology
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      – TitleFull: Electron beam photoresists for nanoimprint lithography
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            NameFull: Gourgon, C.
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            NameFull: Perret, C.
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            – D: 01
              M: 07
              Text: Jul2002
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              Y: 2002
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              Value: 61/62
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