Bibliographic Details
| Title: |
State-of-the-art technologies and kinematical analysis for one-stop finishing of φ300 mm Si wafer |
| Authors: |
Zhou, L.B. lbzhou@dse.ibaraki.ac.jp, Eda, H.1, Shimizu, J.1 |
| Source: |
Journal of Materials Processing Technology. Oct2002, Vol. 129 Issue 1-3, p34. 7p. |
| Subjects: |
Semiconductor wafers, Finishes & finishing, Surface roughness |
| Abstract: |
This research has successfully developed an advanced manufacturing system for φ300 mm silicon wafer, using fixed abrasive instead of conventional free slurry, to provide a totally integrated solution for achieving a surface roughness of Ra<1 nm (Ry<5–6 nm) and a global flatness of <0.2 μm/φ300 mm. In addition to a high throughput rate, this system significantly reduces the total energy consumption by 70%, compared with the current process used for φ200 mm Si wafer. This paper describes the principle of material removal, state-of-the-art technologies and kinematical analysis for the one-stop finishing of φ300 mm Si wafer by fixed abrasive process. [Copyright &y& Elsevier] |
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| Database: |
Engineering Source |
