State-of-the-art technologies and kinematical analysis for one-stop finishing of φ300 mm Si wafer

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Title: State-of-the-art technologies and kinematical analysis for one-stop finishing of φ300 mm Si wafer
Authors: Zhou, L.B. lbzhou@dse.ibaraki.ac.jp, Eda, H.1, Shimizu, J.1
Source: Journal of Materials Processing Technology. Oct2002, Vol. 129 Issue 1-3, p34. 7p.
Subjects: Semiconductor wafers, Finishes & finishing, Surface roughness
Abstract: This research has successfully developed an advanced manufacturing system for φ300 mm silicon wafer, using fixed abrasive instead of conventional free slurry, to provide a totally integrated solution for achieving a surface roughness of Ra<1 nm (Ry<5–6 nm) and a global flatness of <0.2 μm/φ300 mm. In addition to a high throughput rate, this system significantly reduces the total energy consumption by 70%, compared with the current process used for φ200 mm Si wafer. This paper describes the principle of material removal, state-of-the-art technologies and kinematical analysis for the one-stop finishing of φ300 mm Si wafer by fixed abrasive process. [Copyright &y& Elsevier]
Copyright of Journal of Materials Processing Technology is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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DbLabel: Engineering Source
An: 7884545
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PubTypeId: academicJournal
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  Data: State-of-the-art technologies and kinematical analysis for one-stop finishing of φ300 mm Si wafer
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  Data: &lt;searchLink fieldCode=&quot;AR&quot; term=&quot;%22Zhou%2C+L%2EB%2E%22&quot;&gt;Zhou, L.B.&lt;/searchLink&gt;&lt;i&gt; lbzhou@dse.ibaraki.ac.jp&lt;/i&gt;&lt;br /&gt;&lt;searchLink fieldCode=&quot;AR&quot; term=&quot;%22Eda%2C+H%2E%22&quot;&gt;Eda, H.&lt;/searchLink&gt;&lt;relatesTo&gt;1&lt;/relatesTo&gt;&lt;br /&gt;&lt;searchLink fieldCode=&quot;AR&quot; term=&quot;%22Shimizu%2C+J%2E%22&quot;&gt;Shimizu, J.&lt;/searchLink&gt;&lt;relatesTo&gt;1&lt;/relatesTo&gt;
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  Data: &lt;searchLink fieldCode=&quot;JN&quot; term=&quot;%22Journal+of+Materials+Processing+Technology%22&quot;&gt;Journal of Materials Processing Technology&lt;/searchLink&gt;. Oct2002, Vol. 129 Issue 1-3, p34. 7p.
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  Data: &lt;searchLink fieldCode=&quot;DE&quot; term=&quot;%22Semiconductor+wafers%22&quot;&gt;Semiconductor wafers&lt;/searchLink&gt;&lt;br /&gt;&lt;searchLink fieldCode=&quot;DE&quot; term=&quot;%22Finishes+%26+finishing%22&quot;&gt;Finishes &amp; finishing&lt;/searchLink&gt;&lt;br /&gt;&lt;searchLink fieldCode=&quot;DE&quot; term=&quot;%22Surface+roughness%22&quot;&gt;Surface roughness&lt;/searchLink&gt;
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  Label: Abstract
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  Data: This research has successfully developed an advanced manufacturing system for φ300 mm silicon wafer, using fixed abrasive instead of conventional free slurry, to provide a totally integrated solution for achieving a surface roughness of &lt;F&gt;Ra&lt;1&lt;/F&gt; nm (&lt;F&gt;Ry&lt;5–6&lt;/F&gt; nm) and a global flatness of &lt;0.2 μm/φ300 mm. In addition to a high throughput rate, this system significantly reduces the total energy consumption by 70%, compared with the current process used for φ200 mm Si wafer. This paper describes the principle of material removal, state-of-the-art technologies and kinematical analysis for the one-stop finishing of φ300 mm Si wafer by fixed abrasive process. [Copyright &amp;y&amp; Elsevier]
– Name: AbstractSuppliedCopyright
  Label:
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  Data: &lt;i&gt;Copyright of Journal of Materials Processing Technology is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder&#39;s express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.&lt;/i&gt; (Copyright applies to all Abstracts.)
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      – Type: doi
        Value: 10.1016/S0924-0136(02)00571-X
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      – Code: eng
        Text: English
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    Subjects:
      – SubjectFull: Semiconductor wafers
        Type: general
      – SubjectFull: Finishes & finishing
        Type: general
      – SubjectFull: Surface roughness
        Type: general
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      – TitleFull: State-of-the-art technologies and kinematical analysis for one-stop finishing of φ300 mm Si wafer
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            NameFull: Zhou, L.B.
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              Text: Oct2002
              Type: published
              Y: 2002
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