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Low temperature plasma deposition of silicon thin films: From amorphous to crystalline

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Title: Low temperature plasma deposition of silicon thin films: From amorphous to crystalline
Authors: Roca i Cabarrocas, P.1 pere.roca@polytechnique.edu, Cariou, R.1, Labrune, M.1,2
Source: Journal of Non-Crystalline Solids. Sep2012, Vol. 358 Issue 17, p2000-2003. 4p.
Subjects: Low temperature plasmas, Silicon films, Amorphous silicon, Epitaxy, Substrates (Materials science), Nanocrystals, Silicon crystals
Abstract: Abstract: We report on the epitaxial growth of crystalline silicon films on (100) oriented crystalline silicon substrates by standard plasma enhanced chemical vapor deposition at 175°C. Such unexpected epitaxial growth is discussed in the context of deposition processes of silicon thin films, based on silicon radicals and nanocrystals. Our results are supported by previous studies on plasma synthesis of silicon nanocrystals and point toward silicon nanocrystals being the most plausible building blocks for such epitaxial growth. The results lay the basis of a new approach for the obtaining of crystalline silicon thin films and open the path for transferring those epitaxial layers from c-Si wafers to low cost foreign substrates. [Copyright &y& Elsevier]
Copyright of Journal of Non-Crystalline Solids is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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Header DbId: egs
DbLabel: Engineering Source
An: 79807743
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Low temperature plasma deposition of silicon thin films: From amorphous to crystalline
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  Data: <searchLink fieldCode="AR" term="%22Roca+i+Cabarrocas%2C+P%2E%22">Roca i Cabarrocas, P.</searchLink><relatesTo>1</relatesTo><i> pere.roca@polytechnique.edu</i><br /><searchLink fieldCode="AR" term="%22Cariou%2C+R%2E%22">Cariou, R.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Labrune%2C+M%2E%22">Labrune, M.</searchLink><relatesTo>1,2</relatesTo>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Non-Crystalline+Solids%22">Journal of Non-Crystalline Solids</searchLink>. Sep2012, Vol. 358 Issue 17, p2000-2003. 4p.
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  Data: <searchLink fieldCode="DE" term="%22Low+temperature+plasmas%22">Low temperature plasmas</searchLink><br /><searchLink fieldCode="DE" term="%22Silicon+films%22">Silicon films</searchLink><br /><searchLink fieldCode="DE" term="%22Amorphous+silicon%22">Amorphous silicon</searchLink><br /><searchLink fieldCode="DE" term="%22Epitaxy%22">Epitaxy</searchLink><br /><searchLink fieldCode="DE" term="%22Substrates+%28Materials+science%29%22">Substrates (Materials science)</searchLink><br /><searchLink fieldCode="DE" term="%22Nanocrystals%22">Nanocrystals</searchLink><br /><searchLink fieldCode="DE" term="%22Silicon+crystals%22">Silicon crystals</searchLink>
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  Label: Abstract
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  Data: Abstract: We report on the epitaxial growth of crystalline silicon films on (100) oriented crystalline silicon substrates by standard plasma enhanced chemical vapor deposition at 175°C. Such unexpected epitaxial growth is discussed in the context of deposition processes of silicon thin films, based on silicon radicals and nanocrystals. Our results are supported by previous studies on plasma synthesis of silicon nanocrystals and point toward silicon nanocrystals being the most plausible building blocks for such epitaxial growth. The results lay the basis of a new approach for the obtaining of crystalline silicon thin films and open the path for transferring those epitaxial layers from c-Si wafers to low cost foreign substrates. [Copyright &y& Elsevier]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Journal of Non-Crystalline Solids is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
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      – Type: doi
        Value: 10.1016/j.jnoncrysol.2011.12.113
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      – Code: eng
        Text: English
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        PageCount: 4
        StartPage: 2000
    Subjects:
      – SubjectFull: Low temperature plasmas
        Type: general
      – SubjectFull: Silicon films
        Type: general
      – SubjectFull: Amorphous silicon
        Type: general
      – SubjectFull: Epitaxy
        Type: general
      – SubjectFull: Substrates (Materials science)
        Type: general
      – SubjectFull: Nanocrystals
        Type: general
      – SubjectFull: Silicon crystals
        Type: general
    Titles:
      – TitleFull: Low temperature plasma deposition of silicon thin films: From amorphous to crystalline
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            NameFull: Roca i Cabarrocas, P.
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            NameFull: Cariou, R.
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            – D: 01
              M: 09
              Text: Sep2012
              Type: published
              Y: 2012
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              Value: 358
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