Charge carrier transport in solid state crystallized poly-Si films on glass
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| Title: | Charge carrier transport in solid state crystallized poly-Si films on glass |
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| Authors: | Scheller, L.-P., Nickel, N.H. nickel@helmholtz-berlin.de |
| Source: | Journal of Non-Crystalline Solids. Sep2012, Vol. 358 Issue 17, p2057-2059. 3p. |
| Subjects: | Silicon films, Crystallization, Solid state chemistry, Glass, Substrates (Materials science), Temperature effect, Charge transfer |
| Abstract: | Abstract: The influence of the used substrate and the deposition temperature, T d , of the amorphous starting material on the transport properties of solid state crystallized poly-Si is investigated. For poly-Si on a-SiN X :H coated borofloat glass a very small free-carrier concentration that is independent of T d is observed and charge transport is governed by intra-grain scattering mechanisms. For poly-Si on Corning glass the carrier concentration exhibits an inverted U shape as T d increases. These samples exhibit activated behavior of the Hall mobility that is consistent with thermionic carrier emission over potential barriers. [Copyright &y& Elsevier] |
| Copyright of Journal of Non-Crystalline Solids is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
| FullText | Text: Availability: 0 |
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| Header | DbId: egs DbLabel: Engineering Source An: 79807757 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Charge carrier transport in solid state crystallized poly-Si films on glass – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Scheller%2C+L%2E-P%2E%22">Scheller, L.-P.</searchLink><br /><searchLink fieldCode="AR" term="%22Nickel%2C+N%2EH%2E%22">Nickel, N.H.</searchLink><i> nickel@helmholtz-berlin.de</i> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Journal+of+Non-Crystalline+Solids%22">Journal of Non-Crystalline Solids</searchLink>. Sep2012, Vol. 358 Issue 17, p2057-2059. 3p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Silicon+films%22">Silicon films</searchLink><br /><searchLink fieldCode="DE" term="%22Crystallization%22">Crystallization</searchLink><br /><searchLink fieldCode="DE" term="%22Solid+state+chemistry%22">Solid state chemistry</searchLink><br /><searchLink fieldCode="DE" term="%22Glass%22">Glass</searchLink><br /><searchLink fieldCode="DE" term="%22Substrates+%28Materials+science%29%22">Substrates (Materials science)</searchLink><br /><searchLink fieldCode="DE" term="%22Temperature+effect%22">Temperature effect</searchLink><br /><searchLink fieldCode="DE" term="%22Charge+transfer%22">Charge transfer</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: Abstract: The influence of the used substrate and the deposition temperature, T d , of the amorphous starting material on the transport properties of solid state crystallized poly-Si is investigated. For poly-Si on a-SiN X :H coated borofloat glass a very small free-carrier concentration that is independent of T d is observed and charge transport is governed by intra-grain scattering mechanisms. For poly-Si on Corning glass the carrier concentration exhibits an inverted U shape as T d increases. These samples exhibit activated behavior of the Hall mobility that is consistent with thermionic carrier emission over potential barriers. [Copyright &y& Elsevier] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Journal of Non-Crystalline Solids is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1016/j.jnoncrysol.2011.12.109 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 3 StartPage: 2057 Subjects: – SubjectFull: Silicon films Type: general – SubjectFull: Crystallization Type: general – SubjectFull: Solid state chemistry Type: general – SubjectFull: Glass Type: general – SubjectFull: Substrates (Materials science) Type: general – SubjectFull: Temperature effect Type: general – SubjectFull: Charge transfer Type: general Titles: – TitleFull: Charge carrier transport in solid state crystallized poly-Si films on glass Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Scheller, L.-P. – PersonEntity: Name: NameFull: Nickel, N.H. IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 09 Text: Sep2012 Type: published Y: 2012 Identifiers: – Type: issn-print Value: 00223093 Numbering: – Type: volume Value: 358 – Type: issue Value: 17 Titles: – TitleFull: Journal of Non-Crystalline Solids Type: main |
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