Analysis of the practical stability of dewetted Bridgman growth of GaAs
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| Title: | Analysis of the practical stability of dewetted Bridgman growth of GaAs |
|---|---|
| Authors: | Epure, Simona1,2 simona_epure7@yahoo.com, Duffar, Thierry1 |
| Source: | Journal of Crystal Growth. Dec2012, Vol. 360, p25-29. 5p. |
| Subjects: | Gallium arsenide, Crystal growth, Industrial productivity, Radius (Geometry), Pressure, Numerical analysis |
| Abstract: | Abstract: Due to large scale applications the crystal growth technology of gallium arsenide has made considerable progress but there is still a need for improving the crystal size and quality. The study of practical stability of GaAs crystals that could be grown by the dewetted Bridgman process [1] is presented. According to the analytical and numerical investigations of the dynamic stability of the dewetted Bridgman process reported in [2–3], a range of acceptable maximal and minimal crystal radius is given and fluctuations of the gas pressure are introduced in the system. It is shown that only certain frequencies and amplitudes of these fluctuations lead to stable growth in the case of a globally convex meniscus (). When the growth is always unstable. Examples of stable and unstable growth are given for the case of industrial production. [Copyright &y& Elsevier] |
| Copyright of Journal of Crystal Growth is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
| FullText | Text: Availability: 0 |
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| Header | DbId: egs DbLabel: Engineering Source An: 82477896 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Analysis of the practical stability of dewetted Bridgman growth of GaAs – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Epure%2C+Simona%22">Epure, Simona</searchLink><relatesTo>1,2</relatesTo><i> simona_epure7@yahoo.com</i><br /><searchLink fieldCode="AR" term="%22Duffar%2C+Thierry%22">Duffar, Thierry</searchLink><relatesTo>1</relatesTo> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Journal+of+Crystal+Growth%22">Journal of Crystal Growth</searchLink>. Dec2012, Vol. 360, p25-29. 5p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Gallium+arsenide%22">Gallium arsenide</searchLink><br /><searchLink fieldCode="DE" term="%22Crystal+growth%22">Crystal growth</searchLink><br /><searchLink fieldCode="DE" term="%22Industrial+productivity%22">Industrial productivity</searchLink><br /><searchLink fieldCode="DE" term="%22Radius+%28Geometry%29%22">Radius (Geometry)</searchLink><br /><searchLink fieldCode="DE" term="%22Pressure%22">Pressure</searchLink><br /><searchLink fieldCode="DE" term="%22Numerical+analysis%22">Numerical analysis</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: Abstract: Due to large scale applications the crystal growth technology of gallium arsenide has made considerable progress but there is still a need for improving the crystal size and quality. The study of practical stability of GaAs crystals that could be grown by the dewetted Bridgman process [1] is presented. According to the analytical and numerical investigations of the dynamic stability of the dewetted Bridgman process reported in [2–3], a range of acceptable maximal and minimal crystal radius is given and fluctuations of the gas pressure are introduced in the system. It is shown that only certain frequencies and amplitudes of these fluctuations lead to stable growth in the case of a globally convex meniscus (). When the growth is always unstable. Examples of stable and unstable growth are given for the case of industrial production. [Copyright &y& Elsevier] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Journal of Crystal Growth is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1016/j.jcrysgro.2011.11.072 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 5 StartPage: 25 Subjects: – SubjectFull: Gallium arsenide Type: general – SubjectFull: Crystal growth Type: general – SubjectFull: Industrial productivity Type: general – SubjectFull: Radius (Geometry) Type: general – SubjectFull: Pressure Type: general – SubjectFull: Numerical analysis Type: general Titles: – TitleFull: Analysis of the practical stability of dewetted Bridgman growth of GaAs Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Epure, Simona – PersonEntity: Name: NameFull: Duffar, Thierry IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 12 Text: Dec2012 Type: published Y: 2012 Identifiers: – Type: issn-print Value: 00220248 Numbering: – Type: volume Value: 360 Titles: – TitleFull: Journal of Crystal Growth Type: main |
| ResultId | 1 |
