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Spectroscopic ellipsometry analysis of TiO2 films deposited by plasma enhanced chemical vapor deposition in oxygen/titanium tetraisopropoxide plasma

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Title: Spectroscopic ellipsometry analysis of TiO2 films deposited by plasma enhanced chemical vapor deposition in oxygen/titanium tetraisopropoxide plasma
Authors: Li, D., Carette, M., Granier, A., Landesman, J.P., Goullet, A. antoine.goullet@univ-nantes.fr
Source: Thin Solid Films. Nov2012, Vol. 522, p366-371. 6p.
Subjects: Silicon, Ellipsometry, Titanium dioxide films, Plasma-enhanced chemical vapor deposition, Low temperatures, Pressure, Refractive index
Abstract: Abstract: TiO2 thin films were deposited at low pressure and temperature on silicon substrates using plasma enhanced chemical vapor deposition in oxygen rich O2/titanium tetraisopropoxide inductively coupled radiofrequency plasmas. The influence of substrate bias Vb (|Vb|≤50V) on the film properties was investigated. The results obtained by fitting ellipsometry spectra in the 1.5–6eV range, using a three-sublayer physical model, are in good agreement with the film morphology when no bias is applied or Vb =−10V. The refractive indices in the transparent range are enhanced at Vb =−50V, according to a physical model which only includes a homogenous layer and a top roughness layer. Scanning electron microscopic views show that all the films exhibit a columnar structure, but layer compactness and organization increase with the bias. The film structure evolution as a function of Vb is also evidenced on the refractive index dispersion curves. Complementary X-ray diffraction and Fourier transform infrared spectroscopy measurements show that films are basically amorphous mixed with a small amount of anatase at the floating potential (Vb =0), whereas applying a bias voltage leads to the enhancement of anatase phase and the appearance of rutile phase (Vb =−50V). [Copyright &y& Elsevier]
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Database: Engineering Source
Description
Abstract:Abstract: TiO2 thin films were deposited at low pressure and temperature on silicon substrates using plasma enhanced chemical vapor deposition in oxygen rich O2/titanium tetraisopropoxide inductively coupled radiofrequency plasmas. The influence of substrate bias Vb (|Vb|≤50V) on the film properties was investigated. The results obtained by fitting ellipsometry spectra in the 1.5–6eV range, using a three-sublayer physical model, are in good agreement with the film morphology when no bias is applied or Vb =−10V. The refractive indices in the transparent range are enhanced at Vb =−50V, according to a physical model which only includes a homogenous layer and a top roughness layer. Scanning electron microscopic views show that all the films exhibit a columnar structure, but layer compactness and organization increase with the bias. The film structure evolution as a function of Vb is also evidenced on the refractive index dispersion curves. Complementary X-ray diffraction and Fourier transform infrared spectroscopy measurements show that films are basically amorphous mixed with a small amount of anatase at the floating potential (Vb =0), whereas applying a bias voltage leads to the enhancement of anatase phase and the appearance of rutile phase (Vb =−50V). [Copyright &y& Elsevier]
ISSN:00406090
DOI:10.1016/j.tsf.2012.07.091