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Ambipolar characteristics of the polyaniline–poly(styrene sulfonic acid)-based organic thin film transistor via poly(vinyl alcohol) interface modification

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Title: Ambipolar characteristics of the polyaniline–poly(styrene sulfonic acid)-based organic thin film transistor via poly(vinyl alcohol) interface modification
Authors: Li, Yu-Chang1, Lin, Yu-Ju1, Wei, Chia-Yu2, Wang, Yeong-Her1 yhw@eembox.ncku.edu.tw
Source: Solid-State Electronics. Jan2013, Vol. 79, p56-59. 4p.
Subjects: Polyanilines, Polystyrene, Sulfonic acids, Thin film transistors, Polyvinyl alcohol, Interfaces (Physical sciences), Electrochemical analysis, Semiconductor doping
Abstract: Abstract: The ambipolar characteristics of polyaniline–poly(styrene sulfonic acid) (PANI–PSS)-based organic thin film transistor (OTFT) via poly(vinyl alcohol) surface modification were demonstrated. Through ion-assisted electrochemical doping, the PANI–PSS-based OTFT shows the unobvious ambipolar operation caused by the incompatibility interface between water-soluble PANI–PSS and poly(4-vinylphenol) dielectrics. With appropriate control of the interface conditions, the ambipolar characteristics of OTFTs can be enhanced significantly. Hole mobility can be increased from 0.65 to 3.36cm2/Vs while electron mobility is at 1.19cm2/Vs. [Copyright &y& Elsevier]
Copyright of Solid-State Electronics is the property of Pergamon Press - An Imprint of Elsevier Science and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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Header DbId: egs
DbLabel: Engineering Source
An: 83653728
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
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  Data: Ambipolar characteristics of the polyaniline–poly(styrene sulfonic acid)-based organic thin film transistor via poly(vinyl alcohol) interface modification
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  Data: <searchLink fieldCode="AR" term="%22Li%2C+Yu-Chang%22">Li, Yu-Chang</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Lin%2C+Yu-Ju%22">Lin, Yu-Ju</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Wei%2C+Chia-Yu%22">Wei, Chia-Yu</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Wang%2C+Yeong-Her%22">Wang, Yeong-Her</searchLink><relatesTo>1</relatesTo><i> yhw@eembox.ncku.edu.tw</i>
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  Data: <searchLink fieldCode="JN" term="%22Solid-State+Electronics%22">Solid-State Electronics</searchLink>. Jan2013, Vol. 79, p56-59. 4p.
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  Data: <searchLink fieldCode="DE" term="%22Polyanilines%22">Polyanilines</searchLink><br /><searchLink fieldCode="DE" term="%22Polystyrene%22">Polystyrene</searchLink><br /><searchLink fieldCode="DE" term="%22Sulfonic+acids%22">Sulfonic acids</searchLink><br /><searchLink fieldCode="DE" term="%22Thin+film+transistors%22">Thin film transistors</searchLink><br /><searchLink fieldCode="DE" term="%22Polyvinyl+alcohol%22">Polyvinyl alcohol</searchLink><br /><searchLink fieldCode="DE" term="%22Interfaces+%28Physical+sciences%29%22">Interfaces (Physical sciences)</searchLink><br /><searchLink fieldCode="DE" term="%22Electrochemical+analysis%22">Electrochemical analysis</searchLink><br /><searchLink fieldCode="DE" term="%22Semiconductor+doping%22">Semiconductor doping</searchLink>
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  Label: Abstract
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  Data: Abstract: The ambipolar characteristics of polyaniline–poly(styrene sulfonic acid) (PANI–PSS)-based organic thin film transistor (OTFT) via poly(vinyl alcohol) surface modification were demonstrated. Through ion-assisted electrochemical doping, the PANI–PSS-based OTFT shows the unobvious ambipolar operation caused by the incompatibility interface between water-soluble PANI–PSS and poly(4-vinylphenol) dielectrics. With appropriate control of the interface conditions, the ambipolar characteristics of OTFTs can be enhanced significantly. Hole mobility can be increased from 0.65 to 3.36cm2/Vs while electron mobility is at 1.19cm2/Vs. [Copyright &y& Elsevier]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Solid-State Electronics is the property of Pergamon Press - An Imprint of Elsevier Science and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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      – Type: doi
        Value: 10.1016/j.sse.2012.02.011
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      – Code: eng
        Text: English
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        PageCount: 4
        StartPage: 56
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      – SubjectFull: Polyanilines
        Type: general
      – SubjectFull: Polystyrene
        Type: general
      – SubjectFull: Sulfonic acids
        Type: general
      – SubjectFull: Thin film transistors
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      – SubjectFull: Polyvinyl alcohol
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      – SubjectFull: Interfaces (Physical sciences)
        Type: general
      – SubjectFull: Electrochemical analysis
        Type: general
      – SubjectFull: Semiconductor doping
        Type: general
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      – TitleFull: Ambipolar characteristics of the polyaniline–poly(styrene sulfonic acid)-based organic thin film transistor via poly(vinyl alcohol) interface modification
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            NameFull: Li, Yu-Chang
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            NameFull: Lin, Yu-Ju
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            NameFull: Wei, Chia-Yu
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            – D: 01
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              Text: Jan2013
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              Y: 2013
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