ToF-SIMS study of phosphorus diffusion in low-dimensional silicon structures.
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| Title: | ToF-SIMS study of phosphorus diffusion in low-dimensional silicon structures. |
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| Authors: | Perego, Michele1, Seguini, Gabriele1, Fanciulli, Marco1,2 |
| Source: | Surface & Interface Analysis: SIA. Jan2013, Vol. 45 Issue 1, p386-389. 4p. |
| Abstract: | Doping of Si nanocrystals is expected to be crucial in order to tailor the properties of these nanostructures and to implement their technological applications. In this work, phosphosilicate ultra-thin films (P δ-layers) were buried in an SiO/SiO2 multilayer structure, and the redistribution of P atoms during high-temperature (800-1100 °C) thermal treatments was studied by means of ToF-SIMS depth profiling. We demonstrated that the presence of the surrounding SiO2 matrix provides a strong barrier to P diffusion and, for temperatures equal or above 1000 °C, induces P segregation in the SiO regions, where two-dimensional layers of Si nanocrystals are formed during the thermal treatment. Such an effect is qualitatively in agreement with the P diffusivity data reported in the literature. The amount of P atoms incorporated in the Si nanocrystal region is directly controlled through a limited source process by properly adjusting the thickness of the P δ-layer interposed between the SiO and SiO2 films. Copyright © 2012 John Wiley & Sons, Ltd. [ABSTRACT FROM AUTHOR] |
| Copyright of Surface & Interface Analysis: SIA is the property of Wiley-Blackwell and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
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| Header | DbId: egs DbLabel: Engineering Source An: 84385759 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: ToF-SIMS study of phosphorus diffusion in low-dimensional silicon structures. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Perego%2C+Michele%22">Perego, Michele</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Seguini%2C+Gabriele%22">Seguini, Gabriele</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Fanciulli%2C+Marco%22">Fanciulli, Marco</searchLink><relatesTo>1,2</relatesTo> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Surface+%26+Interface+Analysis%3A+SIA%22">Surface & Interface Analysis: SIA</searchLink>. Jan2013, Vol. 45 Issue 1, p386-389. 4p. – Name: Abstract Label: Abstract Group: Ab Data: Doping of Si nanocrystals is expected to be crucial in order to tailor the properties of these nanostructures and to implement their technological applications. In this work, phosphosilicate ultra-thin films (P δ-layers) were buried in an SiO/SiO2 multilayer structure, and the redistribution of P atoms during high-temperature (800-1100 °C) thermal treatments was studied by means of ToF-SIMS depth profiling. We demonstrated that the presence of the surrounding SiO2 matrix provides a strong barrier to P diffusion and, for temperatures equal or above 1000 °C, induces P segregation in the SiO regions, where two-dimensional layers of Si nanocrystals are formed during the thermal treatment. Such an effect is qualitatively in agreement with the P diffusivity data reported in the literature. The amount of P atoms incorporated in the Si nanocrystal region is directly controlled through a limited source process by properly adjusting the thickness of the P δ-layer interposed between the SiO and SiO2 films. Copyright © 2012 John Wiley & Sons, Ltd. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Surface & Interface Analysis: SIA is the property of Wiley-Blackwell and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1002/sia.5001 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 4 StartPage: 386 Titles: – TitleFull: ToF-SIMS study of phosphorus diffusion in low-dimensional silicon structures. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Perego, Michele – PersonEntity: Name: NameFull: Seguini, Gabriele – PersonEntity: Name: NameFull: Fanciulli, Marco IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 01 Text: Jan2013 Type: published Y: 2013 Identifiers: – Type: issn-print Value: 01422421 Numbering: – Type: volume Value: 45 – Type: issue Value: 1 Titles: – TitleFull: Surface & Interface Analysis: SIA Type: main |
| ResultId | 1 |
