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A study of tin impurities in crystalline and amorphous silicon by means of Mössbauer spectroscopy.

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Title: A study of tin impurities in crystalline and amorphous silicon by means of Mössbauer spectroscopy.
Authors: Marchenko, A.1, Anisimova, N.1, Naletko, A.1, Rabchanova, T.1, Seregin, P.1 ppseregin@mail.ru, Ali, H.2
Source: Glass Physics & Chemistry. May2013, Vol. 39 Issue 3, p287-293. 7p.
Subjects: Tin isotopes, Tin compounds, Impurity-dislocation interactions, Amorphous silicon, Mössbauer spectroscopy, Atoms, Crystallography
Abstract: Using the Mössbauer spectroscopy method for the Sn isotope the state of tin impurity atoms in crystalline c-Si and amorphous a-Si silicon is studied. If tin concentration in c-Si does not exceed 2 × 10 atoms/cm then tin enters the lattice as substitutional impurity forming sp hybrid system of chemical bonds. There is discussed a model that describes tin impurity atom as an isotopic impurity. If tin concentration in c-Si exceeds the value, associates of tin impurity atoms are formed in the structure of the doped semiconductor. There are studied the electrical and optical properties of tin doped films of thermally spray-coated amorphous silicon. It is shown that in contrast to the crystalline silicon where tin is an electrically inactive substitution impurity, in vacuum deposited amorphous silicon it produces an acceptor band near the valence band and a fraction of the tin atoms becomes charged. [ABSTRACT FROM AUTHOR]
Copyright of Glass Physics & Chemistry is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Data: A study of tin impurities in crystalline and amorphous silicon by means of Mössbauer spectroscopy.
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  Data: <searchLink fieldCode="JN" term="%22Glass+Physics+%26+Chemistry%22">Glass Physics & Chemistry</searchLink>. May2013, Vol. 39 Issue 3, p287-293. 7p.
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  Data: <searchLink fieldCode="DE" term="%22Tin+isotopes%22">Tin isotopes</searchLink><br /><searchLink fieldCode="DE" term="%22Tin+compounds%22">Tin compounds</searchLink><br /><searchLink fieldCode="DE" term="%22Impurity-dislocation+interactions%22">Impurity-dislocation interactions</searchLink><br /><searchLink fieldCode="DE" term="%22Amorphous+silicon%22">Amorphous silicon</searchLink><br /><searchLink fieldCode="DE" term="%22Mössbauer+spectroscopy%22">Mössbauer spectroscopy</searchLink><br /><searchLink fieldCode="DE" term="%22Atoms%22">Atoms</searchLink><br /><searchLink fieldCode="DE" term="%22Crystallography%22">Crystallography</searchLink>
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  Data: Using the Mössbauer spectroscopy method for the Sn isotope the state of tin impurity atoms in crystalline c-Si and amorphous a-Si silicon is studied. If tin concentration in c-Si does not exceed 2 × 10 atoms/cm then tin enters the lattice as substitutional impurity forming sp hybrid system of chemical bonds. There is discussed a model that describes tin impurity atom as an isotopic impurity. If tin concentration in c-Si exceeds the value, associates of tin impurity atoms are formed in the structure of the doped semiconductor. There are studied the electrical and optical properties of tin doped films of thermally spray-coated amorphous silicon. It is shown that in contrast to the crystalline silicon where tin is an electrically inactive substitution impurity, in vacuum deposited amorphous silicon it produces an acceptor band near the valence band and a fraction of the tin atoms becomes charged. [ABSTRACT FROM AUTHOR]
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  Data: <i>Copyright of Glass Physics & Chemistry is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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      – SubjectFull: Impurity-dislocation interactions
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