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Influence of La on the electrical properties of HfSiON: From diffusion to V th shifts.

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Title: Influence of La on the electrical properties of HfSiON: From diffusion to V th shifts.
Authors: Hackenberg, M.1 moritz.hackenberg@iisb.fraunhofer.de, Pichler, P.1,2, Baudot, S.3, Essa, Z.3,4, Gro-Jean, M.3, Tavernier, C.3, Schamm-Chardon, S.5
Source: Microelectronic Engineering. Sep2013, Vol. 109, p200-203. 4p.
Subjects: Lanthanum, Hafnium compounds, Electric properties of metals, Diffusion, Current-voltage characteristics, Secondary ion mass spectrometry, Threshold voltage
Abstract: Highlights: [•] TiN/HfSiON/SiO2/Substrate stacks were investigated with C–V measurements and SIMS. [•] No linear relationship of the threshold voltage on the La concentration at the HfSiON/SiO2 was found. [•] A linear relationship of the threshold voltage on the La sheet concentration in the HfSiON was found. [•] Crystallization of the HfSiON is proposed as explanation of the experimental findings. [Copyright &y& Elsevier]
Copyright of Microelectronic Engineering is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
FullText Text:
  Availability: 0
Header DbId: egs
DbLabel: Engineering Source
An: 89278083
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Influence of La on the electrical properties of HfSiON: From diffusion to V <subscript>th</subscript> shifts.
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  Data: <searchLink fieldCode="AR" term="%22Hackenberg%2C+M%2E%22">Hackenberg, M.</searchLink><relatesTo>1</relatesTo><i> moritz.hackenberg@iisb.fraunhofer.de</i><br /><searchLink fieldCode="AR" term="%22Pichler%2C+P%2E%22">Pichler, P.</searchLink><relatesTo>1,2</relatesTo><br /><searchLink fieldCode="AR" term="%22Baudot%2C+S%2E%22">Baudot, S.</searchLink><relatesTo>3</relatesTo><br /><searchLink fieldCode="AR" term="%22Essa%2C+Z%2E%22">Essa, Z.</searchLink><relatesTo>3,4</relatesTo><br /><searchLink fieldCode="AR" term="%22Gro-Jean%2C+M%2E%22">Gro-Jean, M.</searchLink><relatesTo>3</relatesTo><br /><searchLink fieldCode="AR" term="%22Tavernier%2C+C%2E%22">Tavernier, C.</searchLink><relatesTo>3</relatesTo><br /><searchLink fieldCode="AR" term="%22Schamm-Chardon%2C+S%2E%22">Schamm-Chardon, S.</searchLink><relatesTo>5</relatesTo>
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  Data: <searchLink fieldCode="JN" term="%22Microelectronic+Engineering%22">Microelectronic Engineering</searchLink>. Sep2013, Vol. 109, p200-203. 4p.
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  Data: <searchLink fieldCode="DE" term="%22Lanthanum%22">Lanthanum</searchLink><br /><searchLink fieldCode="DE" term="%22Hafnium+compounds%22">Hafnium compounds</searchLink><br /><searchLink fieldCode="DE" term="%22Electric+properties+of+metals%22">Electric properties of metals</searchLink><br /><searchLink fieldCode="DE" term="%22Diffusion%22">Diffusion</searchLink><br /><searchLink fieldCode="DE" term="%22Current-voltage+characteristics%22">Current-voltage characteristics</searchLink><br /><searchLink fieldCode="DE" term="%22Secondary+ion+mass+spectrometry%22">Secondary ion mass spectrometry</searchLink><br /><searchLink fieldCode="DE" term="%22Threshold+voltage%22">Threshold voltage</searchLink>
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  Label: Abstract
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  Data: Highlights: [•] TiN/HfSiON/SiO2/Substrate stacks were investigated with C–V measurements and SIMS. [•] No linear relationship of the threshold voltage on the La concentration at the HfSiON/SiO2 was found. [•] A linear relationship of the threshold voltage on the La sheet concentration in the HfSiON was found. [•] Crystallization of the HfSiON is proposed as explanation of the experimental findings. [Copyright &y& Elsevier]
– Name: AbstractSuppliedCopyright
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  Data: <i>Copyright of Microelectronic Engineering is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=egs&AN=89278083
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        Value: 10.1016/j.mee.2013.03.071
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      – Code: eng
        Text: English
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        Type: general
      – SubjectFull: Hafnium compounds
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      – SubjectFull: Electric properties of metals
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      – SubjectFull: Diffusion
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      – SubjectFull: Current-voltage characteristics
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      – SubjectFull: Secondary ion mass spectrometry
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      – SubjectFull: Threshold voltage
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              Text: Sep2013
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