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Dynamic Threshold Schemes for Multi-Level Non-Volatile Memories.

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Title: Dynamic Threshold Schemes for Multi-Level Non-Volatile Memories.
Authors: Sala, Frederic1, Gabrys, Ryan1, Dolecek, Lara1
Source: IEEE Transactions on Communications. Jul2013, Vol. 61 Issue 7, p2624-2634. 11p.
Subjects: Nonvolatile random-access memory, Multilevel codes, Binary sequences, Threshold logic, Information storage & retrieval systems
Abstract: In non-volatile memories, reading stored data is typically done through the use of predetermined fixed thresholds. However, due to problems commonly affecting such memories, including voltage drift, overwriting, and inter-cell coupling, fixed threshold usage often results in significant asymmetric errors. To combat these problems, Zhou, Jiang, and Bruck recently introduced the notion of dynamic thresholds and applied them to the reading of binary sequences. ∈dent In this paper, we explore the use of dynamic thresholds for multi-level cell (MLC) memories. We provide a general scheme to compute and apply dynamic thresholds and derive performance bounds. We show that the proposed scheme compares favorably with the optimal thresholding scheme. Finally, we develop limited-magnitude error-correcting codes tailored to take advantage of dynamic thresholds. [ABSTRACT FROM AUTHOR]
Copyright of IEEE Transactions on Communications is the property of IEEE and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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PubType: Academic Journal
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  Data: In non-volatile memories, reading stored data is typically done through the use of predetermined fixed thresholds. However, due to problems commonly affecting such memories, including voltage drift, overwriting, and inter-cell coupling, fixed threshold usage often results in significant asymmetric errors. To combat these problems, Zhou, Jiang, and Bruck recently introduced the notion of dynamic thresholds and applied them to the reading of binary sequences. ∈dent In this paper, we explore the use of dynamic thresholds for multi-level cell (MLC) memories. We provide a general scheme to compute and apply dynamic thresholds and derive performance bounds. We show that the proposed scheme compares favorably with the optimal thresholding scheme. Finally, we develop limited-magnitude error-correcting codes tailored to take advantage of dynamic thresholds. [ABSTRACT FROM AUTHOR]
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  Data: <i>Copyright of IEEE Transactions on Communications is the property of IEEE and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1109/TCOMM.2013.053013.120733
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      – Code: eng
        Text: English
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        PageCount: 11
        StartPage: 2624
    Subjects:
      – SubjectFull: Nonvolatile random-access memory
        Type: general
      – SubjectFull: Multilevel codes
        Type: general
      – SubjectFull: Binary sequences
        Type: general
      – SubjectFull: Threshold logic
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      – SubjectFull: Information storage & retrieval systems
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      – TitleFull: Dynamic Threshold Schemes for Multi-Level Non-Volatile Memories.
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              Text: Jul2013
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              Y: 2013
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