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Level set implementation for the simulation of anisotropic etching: application to complex MEMS micromachining.

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Title: Level set implementation for the simulation of anisotropic etching: application to complex MEMS micromachining.
Authors: Montoliu, C.1 carmonal@upv.es, Ferrando, N.2, Gosálvez, M. A.3, Cerdá, J.1, Colom, R. J.1
Source: Journal of Micromechanics & Microengineering. 2013, Vol. 23 Issue 7, p1-10. 10p.
Subjects: Simulation methods & models, Anisotropic crystals, Etching, Microelectromechanical systems, Etching reagents, Level set methods
Abstract: The use of atomistic methods, such as the continuous cellular automaton (CCA), is currently regarded as an accurate and efficient approach for the simulation of anisotropic etching in the development of micro-electro-mechanical systems (MEMS). However, whenever the targeted etching condition is modified (e.g. by changing the substrate material, etchant type, concentration and/or temperature) this approach requires performing a time-consuming recalibration of the full set of internal atomistic rates defined within the method. Based on the level set (LS) approach as an alternative and using the experimental data directly as input, we present a fully operational simulator that exhibits similar accuracy to the latest CCA models. The proposed simulator is tested by describing a wide range of silicon and quartz MEMS structures obtained in different etchants through complex processes, including double-sided etching as well as different mask patterns during different etching steps and/or simultaneous masking materials on different regions of the substrate. The results demonstrate that the LS method is able to simulate anisotropic etching for complex MEMS processes with similar computational times and accuracy as the atomistic models. [ABSTRACT FROM AUTHOR]
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Database: Engineering Source
Description
Abstract:The use of atomistic methods, such as the continuous cellular automaton (CCA), is currently regarded as an accurate and efficient approach for the simulation of anisotropic etching in the development of micro-electro-mechanical systems (MEMS). However, whenever the targeted etching condition is modified (e.g. by changing the substrate material, etchant type, concentration and/or temperature) this approach requires performing a time-consuming recalibration of the full set of internal atomistic rates defined within the method. Based on the level set (LS) approach as an alternative and using the experimental data directly as input, we present a fully operational simulator that exhibits similar accuracy to the latest CCA models. The proposed simulator is tested by describing a wide range of silicon and quartz MEMS structures obtained in different etchants through complex processes, including double-sided etching as well as different mask patterns during different etching steps and/or simultaneous masking materials on different regions of the substrate. The results demonstrate that the LS method is able to simulate anisotropic etching for complex MEMS processes with similar computational times and accuracy as the atomistic models. [ABSTRACT FROM AUTHOR]
ISSN:13616439
DOI:10.1088/0960-1317/23/7/075017