Level set implementation for the simulation of anisotropic etching: application to complex MEMS micromachining.
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| Title: | Level set implementation for the simulation of anisotropic etching: application to complex MEMS micromachining. |
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| Authors: | Montoliu, C.1 carmonal@upv.es, Ferrando, N.2, Gosálvez, M. A.3, Cerdá, J.1, Colom, R. J.1 |
| Source: | Journal of Micromechanics & Microengineering. 2013, Vol. 23 Issue 7, p1-10. 10p. |
| Subjects: | Simulation methods & models, Anisotropic crystals, Etching, Microelectromechanical systems, Etching reagents, Level set methods |
| Abstract: | The use of atomistic methods, such as the continuous cellular automaton (CCA), is currently regarded as an accurate and efficient approach for the simulation of anisotropic etching in the development of micro-electro-mechanical systems (MEMS). However, whenever the targeted etching condition is modified (e.g. by changing the substrate material, etchant type, concentration and/or temperature) this approach requires performing a time-consuming recalibration of the full set of internal atomistic rates defined within the method. Based on the level set (LS) approach as an alternative and using the experimental data directly as input, we present a fully operational simulator that exhibits similar accuracy to the latest CCA models. The proposed simulator is tested by describing a wide range of silicon and quartz MEMS structures obtained in different etchants through complex processes, including double-sided etching as well as different mask patterns during different etching steps and/or simultaneous masking materials on different regions of the substrate. The results demonstrate that the LS method is able to simulate anisotropic etching for complex MEMS processes with similar computational times and accuracy as the atomistic models. [ABSTRACT FROM AUTHOR] |
| Copyright of Journal of Micromechanics & Microengineering is the property of IOP Publishing and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
| FullText | Text: Availability: 0 |
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| Header | DbId: egs DbLabel: Engineering Source An: 90149584 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Level set implementation for the simulation of anisotropic etching: application to complex MEMS micromachining. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Montoliu%2C+C%2E%22">Montoliu, C.</searchLink><relatesTo>1</relatesTo><i> carmonal@upv.es</i><br /><searchLink fieldCode="AR" term="%22Ferrando%2C+N%2E%22">Ferrando, N.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Gosálvez%2C+M%2E+A%2E%22">Gosálvez, M. A.</searchLink><relatesTo>3</relatesTo><br /><searchLink fieldCode="AR" term="%22Cerdá%2C+J%2E%22">Cerdá, J.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Colom%2C+R%2E+J%2E%22">Colom, R. J.</searchLink><relatesTo>1</relatesTo> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Journal+of+Micromechanics+%26+Microengineering%22">Journal of Micromechanics & Microengineering</searchLink>. 2013, Vol. 23 Issue 7, p1-10. 10p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Simulation+methods+%26+models%22">Simulation methods & models</searchLink><br /><searchLink fieldCode="DE" term="%22Anisotropic+crystals%22">Anisotropic crystals</searchLink><br /><searchLink fieldCode="DE" term="%22Etching%22">Etching</searchLink><br /><searchLink fieldCode="DE" term="%22Microelectromechanical+systems%22">Microelectromechanical systems</searchLink><br /><searchLink fieldCode="DE" term="%22Etching+reagents%22">Etching reagents</searchLink><br /><searchLink fieldCode="DE" term="%22Level+set+methods%22">Level set methods</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: The use of atomistic methods, such as the continuous cellular automaton (CCA), is currently regarded as an accurate and efficient approach for the simulation of anisotropic etching in the development of micro-electro-mechanical systems (MEMS). However, whenever the targeted etching condition is modified (e.g. by changing the substrate material, etchant type, concentration and/or temperature) this approach requires performing a time-consuming recalibration of the full set of internal atomistic rates defined within the method. Based on the level set (LS) approach as an alternative and using the experimental data directly as input, we present a fully operational simulator that exhibits similar accuracy to the latest CCA models. The proposed simulator is tested by describing a wide range of silicon and quartz MEMS structures obtained in different etchants through complex processes, including double-sided etching as well as different mask patterns during different etching steps and/or simultaneous masking materials on different regions of the substrate. The results demonstrate that the LS method is able to simulate anisotropic etching for complex MEMS processes with similar computational times and accuracy as the atomistic models. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Journal of Micromechanics & Microengineering is the property of IOP Publishing and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1088/0960-1317/23/7/075017 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 10 StartPage: 1 Subjects: – SubjectFull: Simulation methods & models Type: general – SubjectFull: Anisotropic crystals Type: general – SubjectFull: Etching Type: general – SubjectFull: Microelectromechanical systems Type: general – SubjectFull: Etching reagents Type: general – SubjectFull: Level set methods Type: general Titles: – TitleFull: Level set implementation for the simulation of anisotropic etching: application to complex MEMS micromachining. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Montoliu, C. – PersonEntity: Name: NameFull: Ferrando, N. – PersonEntity: Name: NameFull: Gosálvez, M. A. – PersonEntity: Name: NameFull: Cerdá, J. – PersonEntity: Name: NameFull: Colom, R. J. IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 07 Text: 2013 Type: published Y: 2013 Identifiers: – Type: issn-print Value: 13616439 Numbering: – Type: volume Value: 23 – Type: issue Value: 7 Titles: – TitleFull: Journal of Micromechanics & Microengineering Type: main |
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