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Resistance switching in oxides with inhomogeneous conductivity.

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Title: Resistance switching in oxides with inhomogeneous conductivity.
Authors: Shang Da-Shan1 shangdashan@iphy.ac.cn, Sun Ji-Rong1, Shen Bao-Gen1, Wuttig Matthias2
Source: Chinese Physics B. 2013, Vol. 22 Issue 6, p1-18. 18p.
Subjects: Electric fields, Transition metal oxides, Perovskite, Inorganic compounds, Dielectrics research
Abstract: Electric-field-induced resistance switching (RS) phenomena have been studied for over 60 years in metal/dielectrics/metal structures. In these experiments a wide range of dielectrics have been studied including binary transition metal oxides, perovskite oxides, chalcogenides, carbon- and silicon-based materials, as well as organic materials. RS phenomena can be used to store information and offer an attractive performance, which encompasses fast switching speeds, high scalability, and the desirable compatibility with Si-based complementary metal--oxide--semiconductor fabrication. This is promising for nonvolatile memory technology, i.e., resistance random access memory (RRAM). However, a comprehensive understanding of the underlying mechanism is still lacking. This impedes faster product development as well as accurate assessment of the device performance potential. Generally speaking, RS occurs not in the entire dielectric but only in a small, confined region, which results from the local variation of conductivity in dielectrics. In this review, we focus on the RS in oxides with such an inhomogeneous conductivity. According to the origin of the conductivity inhomogeneity, the RS phenomena and their working mechanism are reviewed by dividing them into two aspects: interface RS, based on the change of contact resistance at metal/oxide interface due to the change of Schottky barrier and interface chemical layer, and bulk RS, realized by the formation, connection, and disconnection of conductive channels in the oxides. Finally the current challenges of RS investigation and the potential improvement of the RS performance for the nonvolatile memories are discussed. [ABSTRACT FROM AUTHOR]
Copyright of Chinese Physics B is the property of IOP Publishing and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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DbLabel: Engineering Source
An: 90176433
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  Data: Resistance switching in oxides with inhomogeneous conductivity.
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  Data: <searchLink fieldCode="AR" term="%22Shang+Da-Shan%22">Shang Da-Shan</searchLink><relatesTo>1</relatesTo><i> shangdashan@iphy.ac.cn</i><br /><searchLink fieldCode="AR" term="%22Sun+Ji-Rong%22">Sun Ji-Rong</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Shen+Bao-Gen%22">Shen Bao-Gen</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Wuttig+Matthias%22">Wuttig Matthias</searchLink><relatesTo>2</relatesTo>
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  Data: <searchLink fieldCode="JN" term="%22Chinese+Physics+B%22">Chinese Physics B</searchLink>. 2013, Vol. 22 Issue 6, p1-18. 18p.
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  Data: Electric-field-induced resistance switching (RS) phenomena have been studied for over 60 years in metal/dielectrics/metal structures. In these experiments a wide range of dielectrics have been studied including binary transition metal oxides, perovskite oxides, chalcogenides, carbon- and silicon-based materials, as well as organic materials. RS phenomena can be used to store information and offer an attractive performance, which encompasses fast switching speeds, high scalability, and the desirable compatibility with Si-based complementary metal--oxide--semiconductor fabrication. This is promising for nonvolatile memory technology, i.e., resistance random access memory (RRAM). However, a comprehensive understanding of the underlying mechanism is still lacking. This impedes faster product development as well as accurate assessment of the device performance potential. Generally speaking, RS occurs not in the entire dielectric but only in a small, confined region, which results from the local variation of conductivity in dielectrics. In this review, we focus on the RS in oxides with such an inhomogeneous conductivity. According to the origin of the conductivity inhomogeneity, the RS phenomena and their working mechanism are reviewed by dividing them into two aspects: interface RS, based on the change of contact resistance at metal/oxide interface due to the change of Schottky barrier and interface chemical layer, and bulk RS, realized by the formation, connection, and disconnection of conductive channels in the oxides. Finally the current challenges of RS investigation and the potential improvement of the RS performance for the nonvolatile memories are discussed. [ABSTRACT FROM AUTHOR]
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  Data: <i>Copyright of Chinese Physics B is the property of IOP Publishing and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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      – Type: doi
        Value: 10.1088/1674-1056/22/6/067202
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      – Code: eng
        Text: English
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        PageCount: 18
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      – SubjectFull: Electric fields
        Type: general
      – SubjectFull: Transition metal oxides
        Type: general
      – SubjectFull: Perovskite
        Type: general
      – SubjectFull: Inorganic compounds
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      – SubjectFull: Dielectrics research
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      – TitleFull: Resistance switching in oxides with inhomogeneous conductivity.
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            NameFull: Sun Ji-Rong
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            NameFull: Shen Bao-Gen
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              M: 06
              Text: 2013
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