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Effects of annealing temperature on the microstructure, optical, ferroelectric and photovoltaic properties of BiFeO3 thin films prepared by sol–gel method.

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Title: Effects of annealing temperature on the microstructure, optical, ferroelectric and photovoltaic properties of BiFeO3 thin films prepared by sol–gel method.
Authors: Lin, Zebin1, Cai, Wei1 caiwei_cqu@yahoo.com.cn, Jiang, Weihai1, Fu, Chunlin1,2, Li, Chun3, Song, Yunxia1
Source: Ceramics International. Dec2013, Vol. 39 Issue 8, p8729-8736. 8p.
Subjects: Bismuth compounds, Iron oxides, Annealing of metals, Metal microstructure, Metallic thin films, Effect of temperature on metals, Optical properties of metals, Electric properties of metals, Sol-gel processes
Abstract: Bismuth ferrite thin films were prepared via sol–gel spin-coating method and the effects of annealing temperature on microstructure, optical, ferroelectric and photovoltaic properties have been investigated. The results show that the bismuth ferrite thin films annealed at 550°C is single phase and the grain size increases with the rise of annealing temperature. The band gap of bismuth ferrite thin films annealed at 550–650°C is between 2.306eV and 2.453eV. With the rise of the annealing temperature, the remnant polarization gradually decreases and the coercive electric field increases. The short circuit photocurrent density decreases with the rise of annealing temperature, and the open circuit photovoltage and the power conversion efficiency of bismuth ferrite thin films annealed at 550°C are higher than the thin films annealed at higher temperature. [ABSTRACT FROM AUTHOR]
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Database: Engineering Source
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Abstract:Bismuth ferrite thin films were prepared via sol–gel spin-coating method and the effects of annealing temperature on microstructure, optical, ferroelectric and photovoltaic properties have been investigated. The results show that the bismuth ferrite thin films annealed at 550°C is single phase and the grain size increases with the rise of annealing temperature. The band gap of bismuth ferrite thin films annealed at 550–650°C is between 2.306eV and 2.453eV. With the rise of the annealing temperature, the remnant polarization gradually decreases and the coercive electric field increases. The short circuit photocurrent density decreases with the rise of annealing temperature, and the open circuit photovoltage and the power conversion efficiency of bismuth ferrite thin films annealed at 550°C are higher than the thin films annealed at higher temperature. [ABSTRACT FROM AUTHOR]
ISSN:02728842
DOI:10.1016/j.ceramint.2013.04.058