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A 3.1-10.6 GHz HEMT Distributed Amplifier for Ultra-Wideband Application.

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Title: A 3.1-10.6 GHz HEMT Distributed Amplifier for Ultra-Wideband Application.
Authors: Ebrahimi, Sepideh1 sepideh.ebrahimi87@yahoo.com, MoradiKordalivand, Alishir2 alimoradi2020@gmail.com
Source: Majlesi Journal of Electrical Engineering. Dec2012, Vol. 6 Issue 4, p63-66. 4p.
Subjects: Distributed amplifiers, High electron mobility transistor circuits, Ultra-wideband devices, Traveling wave antennas, Semiconductors
Abstract: In this paper, a Distributed Amplifier (DA) by using HEMT technology for ultra-wideband application is presented. Creation of Distributed integrated circuit has been investigated for approximately seventy years rapidly to developing semiconductor process technologies in the modern IC design. By using of this method, multiple parallel signals are combined and obtain to increase the bandwidth, enhanced power combining amplitude, and novel design capabilities for IC process. The circuit was designed and simulated in ED02AH technology by using ADS2010. The 4-stage design achieves 15.5 dB of power gain (±0.5 dB) from 3.1 to 10.6 GHz. Reflected power of the input and output from loads matched to 50 Ohm are all below -10 dB over the bandwidth of the device, as is power transmitted from the output to the input. The device is stable for a wide range of input and output loads. [ABSTRACT FROM AUTHOR]
Copyright of Majlesi Journal of Electrical Engineering is the property of OICC Press and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Data: A 3.1-10.6 GHz HEMT Distributed Amplifier for Ultra-Wideband Application.
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  Data: <searchLink fieldCode="AR" term="%22Ebrahimi%2C+Sepideh%22">Ebrahimi, Sepideh</searchLink><relatesTo>1</relatesTo><i> sepideh.ebrahimi87@yahoo.com</i><br /><searchLink fieldCode="AR" term="%22MoradiKordalivand%2C+Alishir%22">MoradiKordalivand, Alishir</searchLink><relatesTo>2</relatesTo><i> alimoradi2020@gmail.com</i>
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  Data: <searchLink fieldCode="JN" term="%22Majlesi+Journal+of+Electrical+Engineering%22">Majlesi Journal of Electrical Engineering</searchLink>. Dec2012, Vol. 6 Issue 4, p63-66. 4p.
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  Data: <searchLink fieldCode="DE" term="%22Distributed+amplifiers%22">Distributed amplifiers</searchLink><br /><searchLink fieldCode="DE" term="%22High+electron+mobility+transistor+circuits%22">High electron mobility transistor circuits</searchLink><br /><searchLink fieldCode="DE" term="%22Ultra-wideband+devices%22">Ultra-wideband devices</searchLink><br /><searchLink fieldCode="DE" term="%22Traveling+wave+antennas%22">Traveling wave antennas</searchLink><br /><searchLink fieldCode="DE" term="%22Semiconductors%22">Semiconductors</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: In this paper, a Distributed Amplifier (DA) by using HEMT technology for ultra-wideband application is presented. Creation of Distributed integrated circuit has been investigated for approximately seventy years rapidly to developing semiconductor process technologies in the modern IC design. By using of this method, multiple parallel signals are combined and obtain to increase the bandwidth, enhanced power combining amplitude, and novel design capabilities for IC process. The circuit was designed and simulated in ED02AH technology by using ADS2010. The 4-stage design achieves 15.5 dB of power gain (±0.5 dB) from 3.1 to 10.6 GHz. Reflected power of the input and output from loads matched to 50 Ohm are all below -10 dB over the bandwidth of the device, as is power transmitted from the output to the input. The device is stable for a wide range of input and output loads. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Majlesi Journal of Electrical Engineering is the property of OICC Press and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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      – Code: eng
        Text: English
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        PageCount: 4
        StartPage: 63
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      – SubjectFull: Distributed amplifiers
        Type: general
      – SubjectFull: High electron mobility transistor circuits
        Type: general
      – SubjectFull: Ultra-wideband devices
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      – SubjectFull: Traveling wave antennas
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      – SubjectFull: Semiconductors
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              Text: Dec2012
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