APA (7th ed.) Citation

Ashley, T., Burke, T., Pryce, G., Adams, A., Andreev, A., Murdin, B., . . . Pidgeon, C. (2003). InSb<f>1−x</f>N<f>x</f> growth and devices. Solid-State Electronics, 47(3), 387. https://doi.org/10.1016/S0038-1101(02)00377-5

Chicago Style (17th ed.) Citation

Ashley, T., T.M Burke, G.J Pryce, A.R Adams, A. Andreev, B.N Murdin, E.P O’Reilly, and C.R Pidgeon. "InSb1−xNx Growth and Devices." Solid-State Electronics 47, no. 3 (2003): 387. https://doi.org/10.1016/S0038-1101(02)00377-5.

MLA (9th ed.) Citation

Ashley, T., et al. "InSb1−xNx Growth and Devices." Solid-State Electronics, vol. 47, no. 3, 2003, p. 387, https://doi.org/10.1016/S0038-1101(02)00377-5.