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InSb1−xNx growth and devices

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Title: InSb1−xNx growth and devices
Authors: Ashley, T.1 tashley@qinetiq.com, Burke, T.M.1, Pryce, G.J.1, Adams, A.R.2, Andreev, A.2, Murdin, B.N.2, O’Reilly, E.P.3, Pidgeon, C.R.4
Source: Solid-State Electronics. Mar2003, Vol. 47 Issue 3, p387. 8p.
Subjects: Solid state electronics, Nitrogen, Indium
Abstract: Indium antimonide (InSb) has the smallest energy gap of any of the binary III–V materials, leading to a cut-off wavelength of 7 μm at 300 K. The addition of small proportions of nitrogen to InSb offers the prospect of extending the response wavelength into the 8–12 μm range, which is important for thermal imaging in that atmospheric transmission window and because it encompasses the absorption lines of several environmentally important gases and can therefore be used for monitoring the gases. We report on the growth, by a combination of molecular beam epitaxy and a nitrogen plasma source, of InSb1−xNx with up to 10% nitrogen. Structural characterisation techniques of TEM, AFM and SIMS have enabled some optimisation of material quality to be demonstrated by biasing the sample during growth. Measurements on light emitting diodes comprising a superlattice of InSb0.945N0.055/InSb show an emission wavelength of 10.5 μm, which is confirmed by free electron laser assessment. Comparison with first principles band-structure calculations indicate that approximately 10% of the nitrogen is active. Hall effect measurements of 1 μm thick bulk layers indicate an increasing n-type behaviour, the degeneracy effects of which mean, however, that this is only a lower limit. [Copyright &y& Elsevier]
Copyright of Solid-State Electronics is the property of Pergamon Press - An Imprint of Elsevier Science and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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Header DbId: egs
DbLabel: Engineering Source
An: 9096258
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
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  Label: Title
  Group: Ti
  Data: InSb<f><subscript>1−x</subscript></f>N<f><subscript>x</subscript></f> growth and devices
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  Data: <searchLink fieldCode="AR" term="%22Ashley%2C+T%2E%22">Ashley, T.</searchLink><relatesTo>1</relatesTo><i> tashley@qinetiq.com</i><br /><searchLink fieldCode="AR" term="%22Burke%2C+T%2EM%2E%22">Burke, T.M.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Pryce%2C+G%2EJ%2E%22">Pryce, G.J.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Adams%2C+A%2ER%2E%22">Adams, A.R.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Andreev%2C+A%2E%22">Andreev, A.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Murdin%2C+B%2EN%2E%22">Murdin, B.N.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22O’Reilly%2C+E%2EP%2E%22">O’Reilly, E.P.</searchLink><relatesTo>3</relatesTo><br /><searchLink fieldCode="AR" term="%22Pidgeon%2C+C%2ER%2E%22">Pidgeon, C.R.</searchLink><relatesTo>4</relatesTo>
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  Data: <searchLink fieldCode="JN" term="%22Solid-State+Electronics%22">Solid-State Electronics</searchLink>. Mar2003, Vol. 47 Issue 3, p387. 8p.
– Name: Subject
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  Data: <searchLink fieldCode="DE" term="%22Solid+state+electronics%22">Solid state electronics</searchLink><br /><searchLink fieldCode="DE" term="%22Nitrogen%22">Nitrogen</searchLink><br /><searchLink fieldCode="DE" term="%22Indium%22">Indium</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: Indium antimonide (InSb) has the smallest energy gap of any of the binary III–V materials, leading to a cut-off wavelength of 7 <f>μ</f>m at 300 K. The addition of small proportions of nitrogen to InSb offers the prospect of extending the response wavelength into the 8–12 <f>μ</f>m range, which is important for thermal imaging in that atmospheric transmission window and because it encompasses the absorption lines of several environmentally important gases and can therefore be used for monitoring the gases. We report on the growth, by a combination of molecular beam epitaxy and a nitrogen plasma source, of InSb<f>1−x</f>N<f>x</f> with up to 10% nitrogen. Structural characterisation techniques of TEM, AFM and SIMS have enabled some optimisation of material quality to be demonstrated by biasing the sample during growth. Measurements on light emitting diodes comprising a superlattice of InSb0.945N0.055/InSb show an emission wavelength of 10.5 <f>μ</f>m, which is confirmed by free electron laser assessment. Comparison with first principles band-structure calculations indicate that approximately 10% of the nitrogen is active. Hall effect measurements of 1 <f>μ</f>m thick bulk layers indicate an increasing n-type behaviour, the degeneracy effects of which mean, however, that this is only a lower limit. [Copyright &y& Elsevier]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Solid-State Electronics is the property of Pergamon Press - An Imprint of Elsevier Science and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1016/S0038-1101(02)00377-5
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      – Code: eng
        Text: English
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        PageCount: 8
        StartPage: 387
    Subjects:
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        Type: general
      – SubjectFull: Nitrogen
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      – SubjectFull: Indium
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              Text: Mar2003
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