Recycling a slurry for reuse in chemical mechanical planarization of tungsten wafer: Effect of chemical adjustments and comparison between static and dynamic experiments.

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Title: Recycling a slurry for reuse in chemical mechanical planarization of tungsten wafer: Effect of chemical adjustments and comparison between static and dynamic experiments.
Authors: Testa, F.1,2, Coetsier, C.1, Carretier, E.1, Ennahali, M.2, Laborie, B.2, Moulin, P.1 philippe.moulin@univ-amu.fr
Source: Microelectronic Engineering. Jan2014, Vol. 113, p114-122. 9p.
Subjects: Slurry, Solid waste, Waste recycling, Tungsten, Additives, Mechanical behavior of materials, Chemical vapor deposition
Abstract: Highlights: [•] Effects of chemical additives in slurry on tungsten CMP (W-CMP). [•] Experiments under static and dynamic conditions and results. [•] Discrimination effects of chemistry on the mechanical removal of tungsten. [•] Design of experiments methodology. [•] Recycle polishing slurries to reduce consumables, the limitation of industrial water rejection and lower solid wastes. [ABSTRACT FROM AUTHOR]
Copyright of Microelectronic Engineering is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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An: 91738374
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Items – Name: Title
  Label: Title
  Group: Ti
  Data: Recycling a slurry for reuse in chemical mechanical planarization of tungsten wafer: Effect of chemical adjustments and comparison between static and dynamic experiments.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AR" term="%22Testa%2C+F%2E%22">Testa, F.</searchLink><relatesTo>1,2</relatesTo><br /><searchLink fieldCode="AR" term="%22Coetsier%2C+C%2E%22">Coetsier, C.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Carretier%2C+E%2E%22">Carretier, E.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Ennahali%2C+M%2E%22">Ennahali, M.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Laborie%2C+B%2E%22">Laborie, B.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Moulin%2C+P%2E%22">Moulin, P.</searchLink><relatesTo>1</relatesTo><i> philippe.moulin@univ-amu.fr</i>
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Microelectronic+Engineering%22">Microelectronic Engineering</searchLink>. Jan2014, Vol. 113, p114-122. 9p.
– Name: Subject
  Label: Subjects
  Group: Su
  Data: <searchLink fieldCode="DE" term="%22Slurry%22">Slurry</searchLink><br /><searchLink fieldCode="DE" term="%22Solid+waste%22">Solid waste</searchLink><br /><searchLink fieldCode="DE" term="%22Waste+recycling%22">Waste recycling</searchLink><br /><searchLink fieldCode="DE" term="%22Tungsten%22">Tungsten</searchLink><br /><searchLink fieldCode="DE" term="%22Additives%22">Additives</searchLink><br /><searchLink fieldCode="DE" term="%22Mechanical+behavior+of+materials%22">Mechanical behavior of materials</searchLink><br /><searchLink fieldCode="DE" term="%22Chemical+vapor+deposition%22">Chemical vapor deposition</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: Highlights: [•] Effects of chemical additives in slurry on tungsten CMP (W-CMP). [•] Experiments under static and dynamic conditions and results. [•] Discrimination effects of chemistry on the mechanical removal of tungsten. [•] Design of experiments methodology. [•] Recycle polishing slurries to reduce consumables, the limitation of industrial water rejection and lower solid wastes. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Microelectronic Engineering is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1016/j.mee.2013.07.022
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 9
        StartPage: 114
    Subjects:
      – SubjectFull: Slurry
        Type: general
      – SubjectFull: Solid waste
        Type: general
      – SubjectFull: Waste recycling
        Type: general
      – SubjectFull: Tungsten
        Type: general
      – SubjectFull: Additives
        Type: general
      – SubjectFull: Mechanical behavior of materials
        Type: general
      – SubjectFull: Chemical vapor deposition
        Type: general
    Titles:
      – TitleFull: Recycling a slurry for reuse in chemical mechanical planarization of tungsten wafer: Effect of chemical adjustments and comparison between static and dynamic experiments.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Testa, F.
      – PersonEntity:
          Name:
            NameFull: Coetsier, C.
      – PersonEntity:
          Name:
            NameFull: Carretier, E.
      – PersonEntity:
          Name:
            NameFull: Ennahali, M.
      – PersonEntity:
          Name:
            NameFull: Laborie, B.
      – PersonEntity:
          Name:
            NameFull: Moulin, P.
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 01
              M: 01
              Text: Jan2014
              Type: published
              Y: 2014
          Identifiers:
            – Type: issn-print
              Value: 01679317
          Numbering:
            – Type: volume
              Value: 113
          Titles:
            – TitleFull: Microelectronic Engineering
              Type: main
ResultId 1