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Sol-Gel-Derived Amorphous- MgNb2 O6 Thin Films for Transparent Microelectronics.

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Title: Sol-Gel-Derived Amorphous- MgNb2 O6 Thin Films for Transparent Microelectronics.
Authors: Ho, Yi ‐ Da1, Chen, Kung ‐ Rong1, Huang, Cheng ‐ Liang1, Kuscer, D.1
Source: Journal of the American Ceramic Society. Nov2013, Vol. 96 Issue 11, p3375-3378. 4p. 4 Graphs.
Subjects: Thin film research, Microelectronics research, Sol-gel processes, Amorphous substances, Ceramics
Abstract: In this work, transparent amorphous- MgNb2 O6 thin films were fabricated on ITO/glass substrates using the sol-gel method. The change in the chemical states, as well as the optical and dielectric properties of MgNb2 O6 films at various annealing temperatures is investigated. In this study, MgNb2 O6 films exhibited the amorphous phase when the annealing temperature was below 600°C. From X-ray photoelectron spectroscopy, the major parts of the films' chemical states can be indexed as Mg2+, Nb5+, Nb4+, and O2−. Furthermore, the Nb4+ element can be reduced at higher annealing temperatures. The average transmission percentage in the visible range (λ = 400-800 nm) is over 80% for all MgNb2 O6/ ITO/glass samples, whereas the optical band gap ( Eg) for all samples is estimated at ~4 eV. In addition, the dielectric constant was calculated to be higher than 20 under a 1 MHz AC electric field, with a leakage current density below 2 × 10−7 A/cm2 at 1 V. In this study, the fabrication procedure and experiment results of MgNb2 O6 films are introduced for transparent microelectronics. [ABSTRACT FROM AUTHOR]
Copyright of Journal of the American Ceramic Society is the property of Wiley-Blackwell and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+the+American+Ceramic+Society%22">Journal of the American Ceramic Society</searchLink>. Nov2013, Vol. 96 Issue 11, p3375-3378. 4p. 4 Graphs.
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  Data: <searchLink fieldCode="DE" term="%22Thin+film+research%22">Thin film research</searchLink><br /><searchLink fieldCode="DE" term="%22Microelectronics+research%22">Microelectronics research</searchLink><br /><searchLink fieldCode="DE" term="%22Sol-gel+processes%22">Sol-gel processes</searchLink><br /><searchLink fieldCode="DE" term="%22Amorphous+substances%22">Amorphous substances</searchLink><br /><searchLink fieldCode="DE" term="%22Ceramics%22">Ceramics</searchLink>
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  Data: In this work, transparent amorphous- MgNb2 O6 thin films were fabricated on ITO/glass substrates using the sol-gel method. The change in the chemical states, as well as the optical and dielectric properties of MgNb2 O6 films at various annealing temperatures is investigated. In this study, MgNb2 O6 films exhibited the amorphous phase when the annealing temperature was below 600°C. From X-ray photoelectron spectroscopy, the major parts of the films' chemical states can be indexed as Mg2+, Nb5+, Nb4+, and O2−. Furthermore, the Nb4+ element can be reduced at higher annealing temperatures. The average transmission percentage in the visible range (λ = 400-800 nm) is over 80% for all MgNb2 O6/ ITO/glass samples, whereas the optical band gap ( Eg) for all samples is estimated at ~4 eV. In addition, the dielectric constant was calculated to be higher than 20 under a 1 MHz AC electric field, with a leakage current density below 2 × 10−7 A/cm2 at 1 V. In this study, the fabrication procedure and experiment results of MgNb2 O6 films are introduced for transparent microelectronics. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Journal of the American Ceramic Society is the property of Wiley-Blackwell and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
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    Identifiers:
      – Type: doi
        Value: 10.1111/jace.12611
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      – Code: eng
        Text: English
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      Pagination:
        PageCount: 4
        StartPage: 3375
    Subjects:
      – SubjectFull: Thin film research
        Type: general
      – SubjectFull: Microelectronics research
        Type: general
      – SubjectFull: Sol-gel processes
        Type: general
      – SubjectFull: Amorphous substances
        Type: general
      – SubjectFull: Ceramics
        Type: general
    Titles:
      – TitleFull: Sol-Gel-Derived Amorphous- MgNb2 O6 Thin Films for Transparent Microelectronics.
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            NameFull: Ho, Yi ‐ Da
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            NameFull: Chen, Kung ‐ Rong
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            NameFull: Huang, Cheng ‐ Liang
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            NameFull: Kuscer, D.
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            – D: 01
              M: 11
              Text: Nov2013
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              Y: 2013
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            – TitleFull: Journal of the American Ceramic Society
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