Half-MOS Based Single-Poly EEPROM Cell With Program and Erase Bit Granularity.
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| Title: | Half-MOS Based Single-Poly EEPROM Cell With Program and Erase Bit Granularity. |
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| Authors: | Torricelli, Fabrizio1, Milani, Luca1, Colalongo, Luigi1, Richelli, Anna1, Kovacs-Vajna, Zsolt Miklos1 |
| Source: | IEEE Electron Device Letters. Dec2013, Vol. 34 Issue 12, p1509-1511. 3p. |
| Subjects: | Flash memory, Erasable programmable read-only memory, Complementary metal oxide semiconductors, Computer programming, Threshold voltage, Information technology research |
| Abstract: | A single-poly electrically erasable programmable ROM (EEPROM) cell compatible with standard CMOS process is proposed. With respect to the classical embedded NOR cell, it can be programmed and erased by Fowler–Nordheim tunneling with single-bit granularity. The memory cell is based on a novel writing-inhibition scheme enabled by the combination of the body effect with multiple half-MOS devices. Experimental results on programming, erasing, inhibition, reading, and cycling endurance are provided using a 0.13 \mum standard CMOS process. [ABSTRACT FROM PUBLISHER] |
| Copyright of IEEE Electron Device Letters is the property of IEEE and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
| FullText | Text: Availability: 0 |
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| Header | DbId: egs DbLabel: Engineering Source An: 92520246 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Half-MOS Based Single-Poly EEPROM Cell With Program and Erase Bit Granularity. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Torricelli%2C+Fabrizio%22">Torricelli, Fabrizio</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Milani%2C+Luca%22">Milani, Luca</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Colalongo%2C+Luigi%22">Colalongo, Luigi</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Richelli%2C+Anna%22">Richelli, Anna</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Kovacs-Vajna%2C+Zsolt+Miklos%22">Kovacs-Vajna, Zsolt Miklos</searchLink><relatesTo>1</relatesTo> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22IEEE+Electron+Device+Letters%22">IEEE Electron Device Letters</searchLink>. Dec2013, Vol. 34 Issue 12, p1509-1511. 3p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Flash+memory%22">Flash memory</searchLink><br /><searchLink fieldCode="DE" term="%22Erasable+programmable+read-only+memory%22">Erasable programmable read-only memory</searchLink><br /><searchLink fieldCode="DE" term="%22Complementary+metal+oxide+semiconductors%22">Complementary metal oxide semiconductors</searchLink><br /><searchLink fieldCode="DE" term="%22Computer+programming%22">Computer programming</searchLink><br /><searchLink fieldCode="DE" term="%22Threshold+voltage%22">Threshold voltage</searchLink><br /><searchLink fieldCode="DE" term="%22Information+technology+research%22">Information technology research</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: A single-poly electrically erasable programmable ROM (EEPROM) cell compatible with standard CMOS process is proposed. With respect to the classical embedded NOR cell, it can be programmed and erased by Fowler–Nordheim tunneling with single-bit granularity. The memory cell is based on a novel writing-inhibition scheme enabled by the combination of the body effect with multiple half-MOS devices. Experimental results on programming, erasing, inhibition, reading, and cycling endurance are provided using a 0.13 \mum standard CMOS process. [ABSTRACT FROM PUBLISHER] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of IEEE Electron Device Letters is the property of IEEE and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1109/LED.2013.2285258 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 3 StartPage: 1509 Subjects: – SubjectFull: Flash memory Type: general – SubjectFull: Erasable programmable read-only memory Type: general – SubjectFull: Complementary metal oxide semiconductors Type: general – SubjectFull: Computer programming Type: general – SubjectFull: Threshold voltage Type: general – SubjectFull: Information technology research Type: general Titles: – TitleFull: Half-MOS Based Single-Poly EEPROM Cell With Program and Erase Bit Granularity. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Torricelli, Fabrizio – PersonEntity: Name: NameFull: Milani, Luca – PersonEntity: Name: NameFull: Colalongo, Luigi – PersonEntity: Name: NameFull: Richelli, Anna – PersonEntity: Name: NameFull: Kovacs-Vajna, Zsolt Miklos IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 12 Text: Dec2013 Type: published Y: 2013 Identifiers: – Type: issn-print Value: 07413106 Numbering: – Type: volume Value: 34 – Type: issue Value: 12 Titles: – TitleFull: IEEE Electron Device Letters Type: main |
| ResultId | 1 |
