Dynamic range and sensitivity improvement in near-infrared detectors using silicon germanium bipolar complementary metal-oxide semiconductor technology.
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| Title: | Dynamic range and sensitivity improvement in near-infrared detectors using silicon germanium bipolar complementary metal-oxide semiconductor technology. |
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| Authors: | Venter, Johan1 jwventer@ieee.org, Sinha, Saurabh1 |
| Source: | Optical Engineering. Apr2013, Vol. 52 Issue 4, p1-7. 7p. |
| Subjects: | Dynamic range (Acoustics), Complementary metal oxide semiconductors, Digital electronics -- Research, Junction transistors, Metal oxide semiconductors |
| Abstract: | Classically gated infrared (IR) detectors have been implemented using charge-coupled devices (CCD). Bipolar complementary metal-oxide semiconductor (BiCMOS) technology emerged as a viable alternative platform for development. BiCMOS technology has a number of advantages over CCD and conventional CMOS technology, of which increased switching speed is one. The pixel topology used in this work is a reversed-biased diode connected heterojunction bipolar transistor. The disadvantage of CMOS detectors is the increased readout noise due to the increased on-chip switching compared to CCD, which degrades dynamic range (DR) and sensitivity. This yields increased switching speeds compared to conventional bipolar junction transistors. Sensitivity improved from 50 mA/W (peak) at 430 nm in CCD detectors to 180 mA/W (peak) (or 180;000 V/W) at 665 nm in BiCMOS detectors. Other CMOS IR detectors previously published in the literature showed sensitivity values from 2750 to 5000 V/W or 100 mA/W. The DR also improved from 47 and 53 dB to 70 dB. The sensitivity of conventional CCD detectors previously published is around 53 mA/W. The second advantage is that detection in the near-IR band with conventional silicon integrated technology is possible. This work has shown increased detection capabilities up to 1.1 µm compared to Si detectors. [ABSTRACT FROM AUTHOR] |
| Copyright of Optical Engineering is the property of SPIE - International Society of Optical Engineering and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
| FullText | Text: Availability: 0 |
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| Header | DbId: egs DbLabel: Engineering Source An: 92988669 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Dynamic range and sensitivity improvement in near-infrared detectors using silicon germanium bipolar complementary metal-oxide semiconductor technology. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Venter%2C+Johan%22">Venter, Johan</searchLink><relatesTo>1</relatesTo><i> jwventer@ieee.org</i><br /><searchLink fieldCode="AR" term="%22Sinha%2C+Saurabh%22">Sinha, Saurabh</searchLink><relatesTo>1</relatesTo> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Optical+Engineering%22">Optical Engineering</searchLink>. Apr2013, Vol. 52 Issue 4, p1-7. 7p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Dynamic+range+%28Acoustics%29%22">Dynamic range (Acoustics)</searchLink><br /><searchLink fieldCode="DE" term="%22Complementary+metal+oxide+semiconductors%22">Complementary metal oxide semiconductors</searchLink><br /><searchLink fieldCode="DE" term="%22Digital+electronics+--+Research%22">Digital electronics -- Research</searchLink><br /><searchLink fieldCode="DE" term="%22Junction+transistors%22">Junction transistors</searchLink><br /><searchLink fieldCode="DE" term="%22Metal+oxide+semiconductors%22">Metal oxide semiconductors</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: Classically gated infrared (IR) detectors have been implemented using charge-coupled devices (CCD). Bipolar complementary metal-oxide semiconductor (BiCMOS) technology emerged as a viable alternative platform for development. BiCMOS technology has a number of advantages over CCD and conventional CMOS technology, of which increased switching speed is one. The pixel topology used in this work is a reversed-biased diode connected heterojunction bipolar transistor. The disadvantage of CMOS detectors is the increased readout noise due to the increased on-chip switching compared to CCD, which degrades dynamic range (DR) and sensitivity. This yields increased switching speeds compared to conventional bipolar junction transistors. Sensitivity improved from 50 mA/W (peak) at 430 nm in CCD detectors to 180 mA/W (peak) (or 180;000 V/W) at 665 nm in BiCMOS detectors. Other CMOS IR detectors previously published in the literature showed sensitivity values from 2750 to 5000 V/W or 100 mA/W. The DR also improved from 47 and 53 dB to 70 dB. The sensitivity of conventional CCD detectors previously published is around 53 mA/W. The second advantage is that detection in the near-IR band with conventional silicon integrated technology is possible. This work has shown increased detection capabilities up to 1.1 µm compared to Si detectors. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Optical Engineering is the property of SPIE - International Society of Optical Engineering and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1117/1.OE.52.4.044001 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 7 StartPage: 1 Subjects: – SubjectFull: Dynamic range (Acoustics) Type: general – SubjectFull: Complementary metal oxide semiconductors Type: general – SubjectFull: Digital electronics -- Research Type: general – SubjectFull: Junction transistors Type: general – SubjectFull: Metal oxide semiconductors Type: general Titles: – TitleFull: Dynamic range and sensitivity improvement in near-infrared detectors using silicon germanium bipolar complementary metal-oxide semiconductor technology. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Venter, Johan – PersonEntity: Name: NameFull: Sinha, Saurabh IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 04 Text: Apr2013 Type: published Y: 2013 Identifiers: – Type: issn-print Value: 00913286 Numbering: – Type: volume Value: 52 – Type: issue Value: 4 Titles: – TitleFull: Optical Engineering Type: main |
| ResultId | 1 |
