High-mobility two-dimensional electron gases at oxide interfaces: Origin and opportunities.
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| Title: | High-mobility two-dimensional electron gases at oxide interfaces: Origin and opportunities. |
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| Authors: | Yun-Zhong, Chen1 yunc@dtu.dk, Pryds, Nini1, Ji-Rong, Sun2, Bao-Gen, Shen2, Linderoth, Søren1 |
| Source: | Chinese Physics B. Nov2013, Vol. 22 Issue 11, p116803-116813. 11p. |
| Subjects: | Strontium titanate, Oxidation-reduction reaction, Electron gas research, Heterostructures, Oxygen |
| Abstract: | Our recent experimental work on metallic and insulating interfaces controlled by interfacial redox reactions in SrTiO3-based heterostructures is reviewed along with a more general background of two-dimensional electron gas (2DEG) at oxide interfaces. Due to the presence of oxygen vacancies at the SrTiO3 surface, metallic conduction can be created at room temperature in perovskite-type interfaces when the overlayer oxide ABO3 has Al, Ti, Zr, or Hf elements at the B sites. Furthermore, relying on interface-stabilized oxygen vacancies, we have created a new type of 2DEG at the heterointerface between SrTiO3 and a spinel γ-Al2O3 epitaxial film with compatible oxygen ion sublattices. This 2DEG exhibits an electron mobility exceeding 100000 cm2V−1s−1, more than one order of magnitude higher than those of hitherto investigated perovskite-type interfaces. Our findings pave the way for the design of high-mobility all-oxide electronic devices and open a route toward the studies of mesoscopic physics with complex oxides. [ABSTRACT FROM AUTHOR] |
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| Database: | Engineering Source |
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