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Comparison of shallow-mesa InAs/AlSb HEMTs with and without early-protection for long-term stability against Al(Ga)Sb oxidation*.

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Title: Comparison of shallow-mesa InAs/AlSb HEMTs with and without early-protection for long-term stability against Al(Ga)Sb oxidation*.
Authors: Lefebvre, Eric1,2 ericgp_lefebvre@yahoo.fr, Moschetti, Giuseppe1,3, Malmkvist, Mikael1,4,5, Desplanque, Ludovic6, Wallart, Xavier6, Grahn, Jan1
Source: Semiconductor Science & Technology. Mar2014, Vol. 29 Issue 3, p035010-035016. 7p.
Subjects: Aluminum compounds, Oxidation, Metal fabrication, Modulation-doped field-effect transistors, Electric admittance, Stray currents
Abstract: The fabrication process of InAs/AlSb high electron mobility transistors (HEMTs) has been improved by depositing, after the shallow-mesa isolation of the active area, a thin SiNx-film on the exposed AlGaSb mesa floor. Devices with and without this early-protection against Al(Ga)Sb oxidation have been fabricated simultaneously on the same chip for fair comparison. Optical observations and electrical measurements over four and half years demonstrated the physical stability provided by this extra-coverage. The electrical measurements also revealed that the induced deposition of the probing pads and of the extrinsic part of the gates on SiNx slightly reduced the maximum drain current ID (−9%) and the transconductance gm (−12%) to, respectively, 700 mA mm−1 and 1220 mS mm−1 for 2 × 20 µm2 InAs/AlSb HEMTs with a 140 nm recessed gate. On the other hand, the gate-leakage current IG was lowered by more than one order of magnitude, leading to a better pinch-off behavior and increased values of cut-off frequency fT (+4%) and maximum frequency of oscillation fmax (+36%) to, respectively, 230 GHz and 190 GHz at a drain voltage VDS of 0.5 V. [ABSTRACT FROM AUTHOR]
Copyright of Semiconductor Science & Technology is the property of IOP Publishing and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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DbLabel: Engineering Source
An: 94446870
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  Label: Title
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  Data: Comparison of shallow-mesa InAs/AlSb HEMTs with and without early-protection for long-term stability against Al(Ga)Sb oxidation*.
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  Data: <searchLink fieldCode="AR" term="%22Lefebvre%2C+Eric%22">Lefebvre, Eric</searchLink><relatesTo>1,2</relatesTo><i> ericgp_lefebvre@yahoo.fr</i><br /><searchLink fieldCode="AR" term="%22Moschetti%2C+Giuseppe%22">Moschetti, Giuseppe</searchLink><relatesTo>1,3</relatesTo><br /><searchLink fieldCode="AR" term="%22Malmkvist%2C+Mikael%22">Malmkvist, Mikael</searchLink><relatesTo>1,4,5</relatesTo><br /><searchLink fieldCode="AR" term="%22Desplanque%2C+Ludovic%22">Desplanque, Ludovic</searchLink><relatesTo>6</relatesTo><br /><searchLink fieldCode="AR" term="%22Wallart%2C+Xavier%22">Wallart, Xavier</searchLink><relatesTo>6</relatesTo><br /><searchLink fieldCode="AR" term="%22Grahn%2C+Jan%22">Grahn, Jan</searchLink><relatesTo>1</relatesTo>
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  Data: <searchLink fieldCode="JN" term="%22Semiconductor+Science+%26+Technology%22">Semiconductor Science & Technology</searchLink>. Mar2014, Vol. 29 Issue 3, p035010-035016. 7p.
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  Data: <searchLink fieldCode="DE" term="%22Aluminum+compounds%22">Aluminum compounds</searchLink><br /><searchLink fieldCode="DE" term="%22Oxidation%22">Oxidation</searchLink><br /><searchLink fieldCode="DE" term="%22Metal+fabrication%22">Metal fabrication</searchLink><br /><searchLink fieldCode="DE" term="%22Modulation-doped+field-effect+transistors%22">Modulation-doped field-effect transistors</searchLink><br /><searchLink fieldCode="DE" term="%22Electric+admittance%22">Electric admittance</searchLink><br /><searchLink fieldCode="DE" term="%22Stray+currents%22">Stray currents</searchLink>
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  Data: The fabrication process of InAs/AlSb high electron mobility transistors (HEMTs) has been improved by depositing, after the shallow-mesa isolation of the active area, a thin SiNx-film on the exposed AlGaSb mesa floor. Devices with and without this early-protection against Al(Ga)Sb oxidation have been fabricated simultaneously on the same chip for fair comparison. Optical observations and electrical measurements over four and half years demonstrated the physical stability provided by this extra-coverage. The electrical measurements also revealed that the induced deposition of the probing pads and of the extrinsic part of the gates on SiNx slightly reduced the maximum drain current ID (−9%) and the transconductance gm (−12%) to, respectively, 700 mA mm−1 and 1220 mS mm−1 for 2 × 20 µm2 InAs/AlSb HEMTs with a 140 nm recessed gate. On the other hand, the gate-leakage current IG was lowered by more than one order of magnitude, leading to a better pinch-off behavior and increased values of cut-off frequency fT (+4%) and maximum frequency of oscillation fmax (+36%) to, respectively, 230 GHz and 190 GHz at a drain voltage VDS of 0.5 V. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Semiconductor Science & Technology is the property of IOP Publishing and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1088/0268-1242/29/3/035010
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      – Code: eng
        Text: English
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      – SubjectFull: Aluminum compounds
        Type: general
      – SubjectFull: Oxidation
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      – SubjectFull: Metal fabrication
        Type: general
      – SubjectFull: Modulation-doped field-effect transistors
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      – SubjectFull: Electric admittance
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      – SubjectFull: Stray currents
        Type: general
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      – TitleFull: Comparison of shallow-mesa InAs/AlSb HEMTs with and without early-protection for long-term stability against Al(Ga)Sb oxidation*.
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              Text: Mar2014
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