Quantitative determination of [0 1 0] uniaxial anisotropy and the pinning energy in (Ga,Mn)As films.

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Title: Quantitative determination of [0 1 0] uniaxial anisotropy and the pinning energy in (Ga,Mn)As films.
Authors: Song, C1 songcheng@mail.tsinghua.edu.cn, Lin, D C1, Li, F1, Pan, F1
Source: Semiconductor Science & Technology. Mar2014, Vol. 29 Issue 3, p035004-035010. 7p.
Subjects: Magnetic anisotropy, Thin films, Magnetization, Magnetic semiconductors, Dislocation pinning, Magnetic fields
Abstract: A number of recent magnetization and transport studies show a rich spectrum of magnetic anisotropies of prototypical diluted magnetic semiconductors (Ga,Mn)As. However, few investigations thus far have provided the quantitative determination of [0 1 0] uniaxial magnetic anisotropy (UMA) and the domain-wall pinning field, which are commonly overshadowed by strong cubic anisotropy and huge Zeeman energy. Here we combine results of planar Hall effect experiments carried out at low magnetic fields, and calculations via a modifying Stoner–Wohlfarth model to address this issue. The results of this work indicate that the strength of [0 1 0] UMA constant can be unexpectedly large, even twice as large as that of [] UMA, which differs drastically from the often accepted view that the former is only one tenth of the latter in magnitude. We also obtain quantitative values of the pinning field, which is not constant as expected. Instead, it decreases with increasing temperature or external field. These findings would fulfil the complete picture on magnetic anisotropies of (Ga,Mn)As. [ABSTRACT FROM AUTHOR]
Copyright of Semiconductor Science & Technology is the property of IOP Publishing and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Data: Quantitative determination of [0 1 0] uniaxial anisotropy and the pinning energy in (Ga,Mn)As films.
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  Data: <searchLink fieldCode="JN" term="%22Semiconductor+Science+%26+Technology%22">Semiconductor Science & Technology</searchLink>. Mar2014, Vol. 29 Issue 3, p035004-035010. 7p.
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  Data: <searchLink fieldCode="DE" term="%22Magnetic+anisotropy%22">Magnetic anisotropy</searchLink><br /><searchLink fieldCode="DE" term="%22Thin+films%22">Thin films</searchLink><br /><searchLink fieldCode="DE" term="%22Magnetization%22">Magnetization</searchLink><br /><searchLink fieldCode="DE" term="%22Magnetic+semiconductors%22">Magnetic semiconductors</searchLink><br /><searchLink fieldCode="DE" term="%22Dislocation+pinning%22">Dislocation pinning</searchLink><br /><searchLink fieldCode="DE" term="%22Magnetic+fields%22">Magnetic fields</searchLink>
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  Data: A number of recent magnetization and transport studies show a rich spectrum of magnetic anisotropies of prototypical diluted magnetic semiconductors (Ga,Mn)As. However, few investigations thus far have provided the quantitative determination of [0 1 0] uniaxial magnetic anisotropy (UMA) and the domain-wall pinning field, which are commonly overshadowed by strong cubic anisotropy and huge Zeeman energy. Here we combine results of planar Hall effect experiments carried out at low magnetic fields, and calculations via a modifying Stoner–Wohlfarth model to address this issue. The results of this work indicate that the strength of [0 1 0] UMA constant can be unexpectedly large, even twice as large as that of [] UMA, which differs drastically from the often accepted view that the former is only one tenth of the latter in magnitude. We also obtain quantitative values of the pinning field, which is not constant as expected. Instead, it decreases with increasing temperature or external field. These findings would fulfil the complete picture on magnetic anisotropies of (Ga,Mn)As. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
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  Data: <i>Copyright of Semiconductor Science & Technology is the property of IOP Publishing and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
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      – Type: doi
        Value: 10.1088/0268-1242/29/3/035004
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      – Code: eng
        Text: English
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        PageCount: 7
        StartPage: 035004
    Subjects:
      – SubjectFull: Magnetic anisotropy
        Type: general
      – SubjectFull: Thin films
        Type: general
      – SubjectFull: Magnetization
        Type: general
      – SubjectFull: Magnetic semiconductors
        Type: general
      – SubjectFull: Dislocation pinning
        Type: general
      – SubjectFull: Magnetic fields
        Type: general
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      – TitleFull: Quantitative determination of [0 1 0] uniaxial anisotropy and the pinning energy in (Ga,Mn)As films.
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              M: 03
              Text: Mar2014
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              Y: 2014
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