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An Ultra Low-Power Solution for EEPROM in Passive UHF RFID Tag IC With a Novel Read Circuit and a Time-Divided Charge Pump.

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Bibliographic Details
Title:	An Ultra Low-Power Solution for EEPROM in Passive UHF RFID Tag IC With a Novel Read Circuit and a Time-Divided Charge Pump.
Authors:	Du, Yongqian¹, Zhuang, Yiqi¹, Li, Xiaoming¹, Liu, Weifeng¹, Li, Zhenrong¹, Qi, Zengwei¹
Source:	IEEE Transactions on Circuits & Systems. Part I: Regular Papers. Aug2013, Vol. 60 Issue 8, p2177-2186. 10p.
Subjects:	Erasable programmable read-only memory, UHF devices, Radio frequency identification systems, On-chip charge pumps, Passive components
Abstract:	A dual power supply ultra low-power 1 kbits EEPROM for passive UHF RFID is presented. The read power source is 1 V, while the write power source is 1.65 V, which is only activated in the write mode. To reduce the power of the read circuit without impacting the performance, a pre-charge scheme, a feedback scheme and a self-detect circuit, combined with a special read time sequence are adopted. A time-divided charge pump is proposed to reduce the current surge of the charge pump at the startup phase. The EEPROM IP has been fabricated in a SMIC 0.18~\mum 2P4M EEPROM process. The die size of the proposed EEPROM IP is 0.12~mm^2. The read and write currents of the EEPROM IP are 1.18~\muA and 33~\muA respectively. Under a 110^\circ temperature variation, the power variation of the read operation is 15%. The EEPROM IP is then verified in a full UHF RFID chip. Tested by a commercial reader at 4 W EIRP, the maximum read and write communication ranges are 6 m and 3 m respectively. The measured voltage drop of the output of rectifier Vrect caused by the current surge of the charge pump is smaller than 50 mV. [ABSTRACT FROM PUBLISHER]
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Database:	Engineering Source

Description
Abstract:	A dual power supply ultra low-power 1 kbits EEPROM for passive UHF RFID is presented. The read power source is 1 V, while the write power source is 1.65 V, which is only activated in the write mode. To reduce the power of the read circuit without impacting the performance, a pre-charge scheme, a feedback scheme and a self-detect circuit, combined with a special read time sequence are adopted. A time-divided charge pump is proposed to reduce the current surge of the charge pump at the startup phase. The EEPROM IP has been fabricated in a SMIC 0.18~\mum 2P4M EEPROM process. The die size of the proposed EEPROM IP is 0.12~mm^2. The read and write currents of the EEPROM IP are 1.18~\muA and 33~\muA respectively. Under a 110^\circ temperature variation, the power variation of the read operation is 15%. The EEPROM IP is then verified in a full UHF RFID chip. Tested by a commercial reader at 4 W EIRP, the maximum read and write communication ranges are 6 m and 3 m respectively. The measured voltage drop of the output of rectifier Vrect caused by the current surge of the charge pump is smaller than 50 mV. [ABSTRACT FROM PUBLISHER]
ISSN:	15498328
DOI:	10.1109/TCSI.2013.2239095