An Ultra Low-Power Solution for EEPROM in Passive UHF RFID Tag IC With a Novel Read Circuit and a Time-Divided Charge Pump.

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Title: An Ultra Low-Power Solution for EEPROM in Passive UHF RFID Tag IC With a Novel Read Circuit and a Time-Divided Charge Pump.
Authors: Du, Yongqian1, Zhuang, Yiqi1, Li, Xiaoming1, Liu, Weifeng1, Li, Zhenrong1, Qi, Zengwei1
Source: IEEE Transactions on Circuits & Systems. Part I: Regular Papers. Aug2013, Vol. 60 Issue 8, p2177-2186. 10p.
Subjects: Erasable programmable read-only memory, UHF devices, Radio frequency identification systems, On-chip charge pumps, Passive components
Abstract: A dual power supply ultra low-power 1 kbits EEPROM for passive UHF RFID is presented. The read power source is 1 V, while the write power source is 1.65 V, which is only activated in the write mode. To reduce the power of the read circuit without impacting the performance, a pre-charge scheme, a feedback scheme and a self-detect circuit, combined with a special read time sequence are adopted. A time-divided charge pump is proposed to reduce the current surge of the charge pump at the startup phase. The EEPROM IP has been fabricated in a SMIC 0.18~\mum 2P4M EEPROM process. The die size of the proposed EEPROM IP is 0.12~mm^2. The read and write currents of the EEPROM IP are 1.18~\muA and 33~\muA respectively. Under a 110^\circ temperature variation, the power variation of the read operation is 15%. The EEPROM IP is then verified in a full UHF RFID chip. Tested by a commercial reader at 4 W EIRP, the maximum read and write communication ranges are 6 m and 3 m respectively. The measured voltage drop of the output of rectifier Vrect caused by the current surge of the charge pump is smaller than 50 mV. [ABSTRACT FROM PUBLISHER]
Copyright of IEEE Transactions on Circuits & Systems. Part I: Regular Papers is the property of IEEE and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Data: An Ultra Low-Power Solution for EEPROM in Passive UHF RFID Tag IC With a Novel Read Circuit and a Time-Divided Charge Pump.
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  Data: <searchLink fieldCode="DE" term="%22Erasable+programmable+read-only+memory%22">Erasable programmable read-only memory</searchLink><br /><searchLink fieldCode="DE" term="%22UHF+devices%22">UHF devices</searchLink><br /><searchLink fieldCode="DE" term="%22Radio+frequency+identification+systems%22">Radio frequency identification systems</searchLink><br /><searchLink fieldCode="DE" term="%22On-chip+charge+pumps%22">On-chip charge pumps</searchLink><br /><searchLink fieldCode="DE" term="%22Passive+components%22">Passive components</searchLink>
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  Data: A dual power supply ultra low-power 1 kbits EEPROM for passive UHF RFID is presented. The read power source is 1 V, while the write power source is 1.65 V, which is only activated in the write mode. To reduce the power of the read circuit without impacting the performance, a pre-charge scheme, a feedback scheme and a self-detect circuit, combined with a special read time sequence are adopted. A time-divided charge pump is proposed to reduce the current surge of the charge pump at the startup phase. The EEPROM IP has been fabricated in a SMIC 0.18~\mum 2P4M EEPROM process. The die size of the proposed EEPROM IP is 0.12~mm^2. The read and write currents of the EEPROM IP are 1.18~\muA and 33~\muA respectively. Under a 110^\circ temperature variation, the power variation of the read operation is 15%. The EEPROM IP is then verified in a full UHF RFID chip. Tested by a commercial reader at 4 W EIRP, the maximum read and write communication ranges are 6 m and 3 m respectively. The measured voltage drop of the output of rectifier Vrect caused by the current surge of the charge pump is smaller than 50 mV. [ABSTRACT FROM PUBLISHER]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of IEEE Transactions on Circuits & Systems. Part I: Regular Papers is the property of IEEE and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
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    Identifiers:
      – Type: doi
        Value: 10.1109/TCSI.2013.2239095
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      – Code: eng
        Text: English
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        PageCount: 10
        StartPage: 2177
    Subjects:
      – SubjectFull: Erasable programmable read-only memory
        Type: general
      – SubjectFull: UHF devices
        Type: general
      – SubjectFull: Radio frequency identification systems
        Type: general
      – SubjectFull: On-chip charge pumps
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      – SubjectFull: Passive components
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      – TitleFull: An Ultra Low-Power Solution for EEPROM in Passive UHF RFID Tag IC With a Novel Read Circuit and a Time-Divided Charge Pump.
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            NameFull: Du, Yongqian
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            NameFull: Zhuang, Yiqi
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              M: 08
              Text: Aug2013
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