Bibliographic Details
| Title: |
Reliability of ultra-thin buried oxides for multi-VT FDSOI technology. |
| Authors: |
Besnard, G.1,2,3 guillaume.besnard@soitec.com, Garros, X.2, Nguyen, P.1, Andrieu, F.2, Reynaud, P.1, Van Den Daele, W.1, Bourdelle, K.K.1, Schwarzenbach, W.1, Toffoli, A.2, Kies, R.2, Delprat, D.1, Reimbold, G.2, Cristoloveanu, S.3 |
| Source: |
Solid-State Electronics. Jul2014, Vol. 97, p8-13. 6p. |
| Subjects: |
Silicon-on-insulator technology, Oxides, Electric breakdown, Reliability in engineering, Electric capacity |
| Abstract: |
Highlights: [•] Adapt reliability methods to evaluate the degradation of UTBOX. [•] Study the carrier trapping and defects generation for breakdown in SOI technology. [•] Evaluate the quality and lifetime of buried oxides for back-bias applications. [Copyright &y& Elsevier] |
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| Database: |
Engineering Source |
