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Reliability of ultra-thin buried oxides for multi-VT FDSOI technology.

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Title: Reliability of ultra-thin buried oxides for multi-VT FDSOI technology.
Authors: Besnard, G.1,2,3 guillaume.besnard@soitec.com, Garros, X.2, Nguyen, P.1, Andrieu, F.2, Reynaud, P.1, Van Den Daele, W.1, Bourdelle, K.K.1, Schwarzenbach, W.1, Toffoli, A.2, Kies, R.2, Delprat, D.1, Reimbold, G.2, Cristoloveanu, S.3
Source: Solid-State Electronics. Jul2014, Vol. 97, p8-13. 6p.
Subjects: Silicon-on-insulator technology, Oxides, Electric breakdown, Reliability in engineering, Electric capacity
Abstract: Highlights: [•] Adapt reliability methods to evaluate the degradation of UTBOX. [•] Study the carrier trapping and defects generation for breakdown in SOI technology. [•] Evaluate the quality and lifetime of buried oxides for back-bias applications. [Copyright &y& Elsevier]
Copyright of Solid-State Electronics is the property of Pergamon Press - An Imprint of Elsevier Science and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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Header DbId: egs
DbLabel: Engineering Source
An: 96245534
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Reliability of ultra-thin buried oxides for multi-V<subscript>T</subscript> FDSOI technology.
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  Data: <searchLink fieldCode="AR" term="%22Besnard%2C+G%2E%22">Besnard, G.</searchLink><relatesTo>1,2,3</relatesTo><i> guillaume.besnard@soitec.com</i><br /><searchLink fieldCode="AR" term="%22Garros%2C+X%2E%22">Garros, X.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Nguyen%2C+P%2E%22">Nguyen, P.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Andrieu%2C+F%2E%22">Andrieu, F.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Reynaud%2C+P%2E%22">Reynaud, P.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Van+Den+Daele%2C+W%2E%22">Van Den Daele, W.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Bourdelle%2C+K%2EK%2E%22">Bourdelle, K.K.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Schwarzenbach%2C+W%2E%22">Schwarzenbach, W.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Toffoli%2C+A%2E%22">Toffoli, A.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Kies%2C+R%2E%22">Kies, R.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Delprat%2C+D%2E%22">Delprat, D.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Reimbold%2C+G%2E%22">Reimbold, G.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Cristoloveanu%2C+S%2E%22">Cristoloveanu, S.</searchLink><relatesTo>3</relatesTo>
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  Data: <searchLink fieldCode="JN" term="%22Solid-State+Electronics%22">Solid-State Electronics</searchLink>. Jul2014, Vol. 97, p8-13. 6p.
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  Data: <searchLink fieldCode="DE" term="%22Silicon-on-insulator+technology%22">Silicon-on-insulator technology</searchLink><br /><searchLink fieldCode="DE" term="%22Oxides%22">Oxides</searchLink><br /><searchLink fieldCode="DE" term="%22Electric+breakdown%22">Electric breakdown</searchLink><br /><searchLink fieldCode="DE" term="%22Reliability+in+engineering%22">Reliability in engineering</searchLink><br /><searchLink fieldCode="DE" term="%22Electric+capacity%22">Electric capacity</searchLink>
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  Data: Highlights: [•] Adapt reliability methods to evaluate the degradation of UTBOX. [•] Study the carrier trapping and defects generation for breakdown in SOI technology. [•] Evaluate the quality and lifetime of buried oxides for back-bias applications. [Copyright &y& Elsevier]
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  Data: <i>Copyright of Solid-State Electronics is the property of Pergamon Press - An Imprint of Elsevier Science and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1016/j.sse.2014.04.035
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              Text: Jul2014
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