Charge carrier transport in boron doped poly-Si1.
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| Title: | Charge carrier transport in boron doped poly-Si1. |
|---|---|
| Authors: | Moser, M., Scheller, L.-P., Nickel, N.H. |
| Source: | Canadian Journal of Physics. Jul2014, Vol. 92 Issue 7/8, p705-708. 4p. 5 Graphs. |
| Subjects: | Polycrystalline silicon, Boron, Silicon, Thermistors, Electron emission |
| Abstract (English): | The influence of the used substrate and the boron doping concentration of the charge-transport properties of solid-phase crystallized polycrystalline silicon (poly-Si) is explored. The samples were characterized using temperature dependent transport measurements to determine mobility, carrier concentration, and conductivity. While Arrhenius plots of the hole concentration cannot be used to determine the position of the Fermi energy, a detailed analysis of the temperature dependent carrier concentration shows a Meyer-Neldel and an anti-Meyer-Neldel rule. Charge transport in poly-Si on SiN coated Borofloat glass with a boron concentraion [B] < 1016 cm-3 is limited by phonon scattering. On the other hand, for all poly-Si samples on Corning glass and poly-Si on SiN coated Borofloat glass with [B] > 1016 cm-3 charge-carrier transport is governed by thermionic emission over potential barriers. The data are discussed in terms of the Baccarani transport model. [ABSTRACT FROM AUTHOR] |
| Abstract (French): | Nous explorons l'influence du substrat utilisé et de la concentration du dopage en bore, sur les propriétés de transport de charge du silicium poly-cristallin (ploy-Si) cristallisé en phase solide. Les échantillons sont caractérisés en utilisant des mesures de transport dépendant de la température pour déterminer la mobilité, la concentration de porteurs et la conductivité. Alors que le graphique d'Arrhenius de la concentration de trous ne peut pas être utilisé pour déterminer l'énergie de Fermi, une étude détaillée de la dépendance en température de la concentration de porteurs montre une règle de Meyer-Neldel et une règle anti-Meyer-Neldel. Le transport de charge utilisant du verre Borofloat couvert de poly-Si sur SiN, avec une concentration de bore [B] < 1016 cm−3, est limité par la diffusion avec les phonons. D'un autre côté, pour tous les échantillons de poly-Si sur du verre Corning et de verre Borofloat couvert de poly-Si sur SiN, avec [B] > 1016 cm−3, le transport des porteurs de charge est contrôlé par l'émission thermioïnique au dessus des barrières de potentiel. Nous analysons les données à partir du modèle de transport de Baccarani. [Traduit par la Rédaction] [ABSTRACT FROM AUTHOR] |
| Copyright of Canadian Journal of Physics is the property of Canadian Science Publishing and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
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| Header | DbId: egs DbLabel: Engineering Source An: 96984365 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Charge carrier transport in boron doped poly-Si<superscript>1</superscript>. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Moser%2C+M%2E%22">Moser, M.</searchLink><br /><searchLink fieldCode="AR" term="%22Scheller%2C+L%2E-P%2E%22">Scheller, L.-P.</searchLink><br /><searchLink fieldCode="AR" term="%22Nickel%2C+N%2EH%2E%22">Nickel, N.H.</searchLink> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Canadian+Journal+of+Physics%22">Canadian Journal of Physics</searchLink>. Jul2014, Vol. 92 Issue 7/8, p705-708. 4p. 5 Graphs. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Polycrystalline+silicon%22">Polycrystalline silicon</searchLink><br /><searchLink fieldCode="DE" term="%22Boron%22">Boron</searchLink><br /><searchLink fieldCode="DE" term="%22Silicon%22">Silicon</searchLink><br /><searchLink fieldCode="DE" term="%22Thermistors%22">Thermistors</searchLink><br /><searchLink fieldCode="DE" term="%22Electron+emission%22">Electron emission</searchLink> – Name: Abstract Label: Abstract (English) Group: Ab Data: The influence of the used substrate and the boron doping concentration of the charge-transport properties of solid-phase crystallized polycrystalline silicon (poly-Si) is explored. The samples were characterized using temperature dependent transport measurements to determine mobility, carrier concentration, and conductivity. While Arrhenius plots of the hole concentration cannot be used to determine the position of the Fermi energy, a detailed analysis of the temperature dependent carrier concentration shows a Meyer-Neldel and an anti-Meyer-Neldel rule. Charge transport in poly-Si on SiN coated Borofloat glass with a boron concentraion [B] < 1016 cm-3 is limited by phonon scattering. On the other hand, for all poly-Si samples on Corning glass and poly-Si on SiN coated Borofloat glass with [B] > 1016 cm-3 charge-carrier transport is governed by thermionic emission over potential barriers. The data are discussed in terms of the Baccarani transport model. [ABSTRACT FROM AUTHOR] – Name: Abstract Label: Abstract (French) Group: Ab Data: Nous explorons l'influence du substrat utilisé et de la concentration du dopage en bore, sur les propriétés de transport de charge du silicium poly-cristallin (ploy-Si) cristallisé en phase solide. Les échantillons sont caractérisés en utilisant des mesures de transport dépendant de la température pour déterminer la mobilité, la concentration de porteurs et la conductivité. Alors que le graphique d'Arrhenius de la concentration de trous ne peut pas être utilisé pour déterminer l'énergie de Fermi, une étude détaillée de la dépendance en température de la concentration de porteurs montre une règle de Meyer-Neldel et une règle anti-Meyer-Neldel. Le transport de charge utilisant du verre Borofloat couvert de poly-Si sur SiN, avec une concentration de bore [B] < 1016 cm−3, est limité par la diffusion avec les phonons. D'un autre côté, pour tous les échantillons de poly-Si sur du verre Corning et de verre Borofloat couvert de poly-Si sur SiN, avec [B] > 1016 cm−3, le transport des porteurs de charge est contrôlé par l'émission thermioïnique au dessus des barrières de potentiel. Nous analysons les données à partir du modèle de transport de Baccarani. [Traduit par la Rédaction] [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Canadian Journal of Physics is the property of Canadian Science Publishing and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1139/cjp-2013-0563 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 4 StartPage: 705 Subjects: – SubjectFull: Polycrystalline silicon Type: general – SubjectFull: Boron Type: general – SubjectFull: Silicon Type: general – SubjectFull: Thermistors Type: general – SubjectFull: Electron emission Type: general Titles: – TitleFull: Charge carrier transport in boron doped poly-Si1. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Moser, M. – PersonEntity: Name: NameFull: Scheller, L.-P. – PersonEntity: Name: NameFull: Nickel, N.H. IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 07 Text: Jul2014 Type: published Y: 2014 Identifiers: – Type: issn-print Value: 00084204 Numbering: – Type: volume Value: 92 – Type: issue Value: 7/8 Titles: – TitleFull: Canadian Journal of Physics Type: main |
| ResultId | 1 |
