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Built-In Self-Test, Diagnosis, and Repair of MultiMode Power Switches.

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Title: Built-In Self-Test, Diagnosis, and Repair of MultiMode Power Switches.
Authors: Wang, Ran1, Zhang, Zhaobo2, Kavousianos, Xrysovalantis3, Tsiatouhas, Yiorgos3, Chakrabarty, Krishnendu1
Source: IEEE Transactions on Computer-Aided Design of Integrated Circuits & Systems. Aug2014, Vol. 33 Issue 8, p1231-1244. 14p.
Subjects: Complementary metal oxide semiconductors, CMOS memory circuits, Metal oxide semiconductors, Energy consumption research, Electric potential
Abstract: Recently proposed power-gating structures for intermediate power-off modes offer significant power saving benefits as they reduce the leakage power during short periods of inactivity. Even though they are very effective for reducing static power consumption, their reliable operation can be compromised by process variations and manufacturing defects. In this paper, we propose a signature analysis technique to efficiently test power-gating structures that provide intermediate power-off modes. Based on this technique, a methodology to repair catastrophic and parametric faults, and to tolerate process variations is presented. For testing and repairing multimode power switches, we propose a robust built-in self-test and built-in self-repair scheme that reduces test cost and obviates additional manufacturing steps for post-silicon repair. Simulation results highlight the low-cost and effectiveness of the proposed method for detecting, diagnosing, and repairing defects. [ABSTRACT FROM PUBLISHER]
Copyright of IEEE Transactions on Computer-Aided Design of Integrated Circuits & Systems is the property of IEEE and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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DbLabel: Engineering Source
An: 97129712
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
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  Data: Built-In Self-Test, Diagnosis, and Repair of MultiMode Power Switches.
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  Data: <searchLink fieldCode="AR" term="%22Wang%2C+Ran%22">Wang, Ran</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Zhang%2C+Zhaobo%22">Zhang, Zhaobo</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Kavousianos%2C+Xrysovalantis%22">Kavousianos, Xrysovalantis</searchLink><relatesTo>3</relatesTo><br /><searchLink fieldCode="AR" term="%22Tsiatouhas%2C+Yiorgos%22">Tsiatouhas, Yiorgos</searchLink><relatesTo>3</relatesTo><br /><searchLink fieldCode="AR" term="%22Chakrabarty%2C+Krishnendu%22">Chakrabarty, Krishnendu</searchLink><relatesTo>1</relatesTo>
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  Data: <searchLink fieldCode="DE" term="%22Complementary+metal+oxide+semiconductors%22">Complementary metal oxide semiconductors</searchLink><br /><searchLink fieldCode="DE" term="%22CMOS+memory+circuits%22">CMOS memory circuits</searchLink><br /><searchLink fieldCode="DE" term="%22Metal+oxide+semiconductors%22">Metal oxide semiconductors</searchLink><br /><searchLink fieldCode="DE" term="%22Energy+consumption+research%22">Energy consumption research</searchLink><br /><searchLink fieldCode="DE" term="%22Electric+potential%22">Electric potential</searchLink>
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  Data: Recently proposed power-gating structures for intermediate power-off modes offer significant power saving benefits as they reduce the leakage power during short periods of inactivity. Even though they are very effective for reducing static power consumption, their reliable operation can be compromised by process variations and manufacturing defects. In this paper, we propose a signature analysis technique to efficiently test power-gating structures that provide intermediate power-off modes. Based on this technique, a methodology to repair catastrophic and parametric faults, and to tolerate process variations is presented. For testing and repairing multimode power switches, we propose a robust built-in self-test and built-in self-repair scheme that reduces test cost and obviates additional manufacturing steps for post-silicon repair. Simulation results highlight the low-cost and effectiveness of the proposed method for detecting, diagnosing, and repairing defects. [ABSTRACT FROM PUBLISHER]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of IEEE Transactions on Computer-Aided Design of Integrated Circuits & Systems is the property of IEEE and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1109/TCAD.2014.2314303
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      – Code: eng
        Text: English
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        PageCount: 14
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        Type: general
      – SubjectFull: CMOS memory circuits
        Type: general
      – SubjectFull: Metal oxide semiconductors
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      – SubjectFull: Energy consumption research
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      – SubjectFull: Electric potential
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      – TitleFull: Built-In Self-Test, Diagnosis, and Repair of MultiMode Power Switches.
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            NameFull: Chakrabarty, Krishnendu
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              Text: Aug2014
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