Bibliographic Details
| Title: |
Nanoscale Integration of Two-Dimensional Materialsby Lateral Heteroepitaxy. |
| Authors: |
Sutter, Peter1, Huang, Yuan1, Sutter, Eli1 |
| Source: |
Nano Letters. Aug2014, Vol. 14 Issue 8, p4846-4851. 6p. |
| Subjects: |
Epitaxy, Heterostructures, Materials science, Boron nitride, Nanostructures, Fabrication (Manufacturing) |
| Abstract: |
Materials integration in heterostructureswith novel propertiesdifferent from those of the constituents has become one of the mostpowerful concepts of modern materials science. Two-dimensional (2D)crystals represent a new class of materials from which such engineeredstructures can be envisioned. Calculations have predicted emergentproperties in 2D heterostructures with nanoscale feature sizes, butmethods for their controlled fabrication have been lacking. Here,we use sequential graphene and boron nitride growth on Ru(0001) toshow that lateral heteroepitaxy, the joining of 2D materials by preferentialincorporation of different atomic species into exposed 1D edges duringchemical vapor deposition on a metal substrate, can be used for thebottom-up synthesis of 2D heterostructures with characteristic dimensionson the nanoscale. Our results suggest that on a proper substrate,this method lends itself to building nanoheterostructures from a widerange of 2D materials. [ABSTRACT FROM AUTHOR] |
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| Database: |
Engineering Source |
