Radiation Silicon Carbide Detectors Based on Ion Implantation of Boron.
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| Title: | Radiation Silicon Carbide Detectors Based on Ion Implantation of Boron. |
|---|---|
| Authors: | Issa, F.1, Vervisch, V.1, Ottaviani, L.1, Szalkai, D.2, Vermeeren, L.3, Lyoussi, A.4, Kuznetsov, A.5, Lazar, M.6, Klix, A.2, Palais, O.1, Hallen, A.7 |
| Source: | IEEE Transactions on Nuclear Science. Aug2014 Part 2, Vol. 61 Issue 4, p2105-2111. 7p. |
| Subjects: | Nuclear counters, Silicon carbide, Neutron counters, Ion implantation, Thermal neutrons, Gamma rays |
| Abstract: | Radiation detectors based on radiation-hardened semiconductor such as silicon carbide (SiC), have received considerable attention in many applications such as in outer space, high energy physics experiments, gas and oil prospection, and nuclear reactors. In the frame work of the European project I_SMART (Innovative Sensor for Material Ageing and Radiation Testing), we demonstrated for the first time the reliability of thermal neutron detectors realized by standard ion implantation of boron atoms to form a neutron converter layer (NCL). Two types of detectors were realized; the first was implanted by aluminum to create the p^ + - layer, and then implanted by boron (^10B) to realize the NCL. The second type was based on p^ + - \epitaxial layer, and was implanted by ^10B into the aluminum metallic contact in order to avoid implantation-related defect within the sensitive area. Both kinds of detectors reveal to respond to thermal neutrons and gamma rays, showing consistent counting rates as a function of bias voltages, radiation intensity and type of shielding. [ABSTRACT FROM PUBLISHER] |
| Copyright of IEEE Transactions on Nuclear Science is the property of IEEE and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
| FullText | Text: Availability: 0 |
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| Header | DbId: egs DbLabel: Engineering Source An: 97562990 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Radiation Silicon Carbide Detectors Based on Ion Implantation of Boron. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Issa%2C+F%2E%22">Issa, F.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Vervisch%2C+V%2E%22">Vervisch, V.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Ottaviani%2C+L%2E%22">Ottaviani, L.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Szalkai%2C+D%2E%22">Szalkai, D.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Vermeeren%2C+L%2E%22">Vermeeren, L.</searchLink><relatesTo>3</relatesTo><br /><searchLink fieldCode="AR" term="%22Lyoussi%2C+A%2E%22">Lyoussi, A.</searchLink><relatesTo>4</relatesTo><br /><searchLink fieldCode="AR" term="%22Kuznetsov%2C+A%2E%22">Kuznetsov, A.</searchLink><relatesTo>5</relatesTo><br /><searchLink fieldCode="AR" term="%22Lazar%2C+M%2E%22">Lazar, M.</searchLink><relatesTo>6</relatesTo><br /><searchLink fieldCode="AR" term="%22Klix%2C+A%2E%22">Klix, A.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Palais%2C+O%2E%22">Palais, O.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Hallen%2C+A%2E%22">Hallen, A.</searchLink><relatesTo>7</relatesTo> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22IEEE+Transactions+on+Nuclear+Science%22">IEEE Transactions on Nuclear Science</searchLink>. Aug2014 Part 2, Vol. 61 Issue 4, p2105-2111. 7p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Nuclear+counters%22">Nuclear counters</searchLink><br /><searchLink fieldCode="DE" term="%22Silicon+carbide%22">Silicon carbide</searchLink><br /><searchLink fieldCode="DE" term="%22Neutron+counters%22">Neutron counters</searchLink><br /><searchLink fieldCode="DE" term="%22Ion+implantation%22">Ion implantation</searchLink><br /><searchLink fieldCode="DE" term="%22Thermal+neutrons%22">Thermal neutrons</searchLink><br /><searchLink fieldCode="DE" term="%22Gamma+rays%22">Gamma rays</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: Radiation detectors based on radiation-hardened semiconductor such as silicon carbide (SiC), have received considerable attention in many applications such as in outer space, high energy physics experiments, gas and oil prospection, and nuclear reactors. In the frame work of the European project I_SMART (Innovative Sensor for Material Ageing and Radiation Testing), we demonstrated for the first time the reliability of thermal neutron detectors realized by standard ion implantation of boron atoms to form a neutron converter layer (NCL). Two types of detectors were realized; the first was implanted by aluminum to create the p^ + - layer, and then implanted by boron (^10B) to realize the NCL. The second type was based on p^ + - \epitaxial layer, and was implanted by ^10B into the aluminum metallic contact in order to avoid implantation-related defect within the sensitive area. Both kinds of detectors reveal to respond to thermal neutrons and gamma rays, showing consistent counting rates as a function of bias voltages, radiation intensity and type of shielding. [ABSTRACT FROM PUBLISHER] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of IEEE Transactions on Nuclear Science is the property of IEEE and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1109/TNS.2014.2320943 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 7 StartPage: 2105 Subjects: – SubjectFull: Nuclear counters Type: general – SubjectFull: Silicon carbide Type: general – SubjectFull: Neutron counters Type: general – SubjectFull: Ion implantation Type: general – SubjectFull: Thermal neutrons Type: general – SubjectFull: Gamma rays Type: general Titles: – TitleFull: Radiation Silicon Carbide Detectors Based on Ion Implantation of Boron. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Issa, F. – PersonEntity: Name: NameFull: Vervisch, V. – PersonEntity: Name: NameFull: Ottaviani, L. – PersonEntity: Name: NameFull: Szalkai, D. – PersonEntity: Name: NameFull: Vermeeren, L. – PersonEntity: Name: NameFull: Lyoussi, A. – PersonEntity: Name: NameFull: Kuznetsov, A. – PersonEntity: Name: NameFull: Lazar, M. – PersonEntity: Name: NameFull: Klix, A. – PersonEntity: Name: NameFull: Palais, O. – PersonEntity: Name: NameFull: Hallen, A. IsPartOfRelationships: – BibEntity: Dates: – D: 10 M: 08 Text: Aug2014 Part 2 Type: published Y: 2014 Identifiers: – Type: issn-print Value: 00189499 Numbering: – Type: volume Value: 61 – Type: issue Value: 4 Titles: – TitleFull: IEEE Transactions on Nuclear Science Type: main |
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