Bibliographic Details
| Title: |
Enhanced Performance of Single Poly-Silicon EEPROM Cell With a Tungsten Finger Coupling Structure by Full CMOS Process. |
| Authors: |
Chung, Chih-Ping1, Chang-Liao, Kuei-Shu1, Chen, Chun-Yuan1 |
| Source: |
IEEE Transactions on Electron Devices. Sep2014, Vol. 61 Issue 9, p3075-3080. 6p. |
| Subjects: |
Erasable programmable read-only memory, Complementary metal oxide semiconductors, Nonvolatile memory, Polycrystalline silicon, Programmable read-only memory |
| Abstract: |
A single poly-silicon electrically erasable programmable read only memory cell with a tungsten finger coupling structure by fully compatible 0.13- \(\mu \) m CMOS process is proposed for the first time in this paper and its performances are compared with the conventional poly-silicon finger coupling cell. Results show that the tungsten finger coupling cell has smaller drain-induced barrier lowering effect, higher coupling ratio, and higher cell current and programming/erasing (P/E) speeds due to its metallic control gate and incremental capacitance from control gate structure. Furthermore, the reliability characteristics in this proposed tungsten finger coupling cell are comparable with poly-silicon finger coupling cell, and its P/E windows are wider during reliability tests. [ABSTRACT FROM PUBLISHER] |
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| Database: |
Engineering Source |
