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Enhanced Performance of Single Poly-Silicon EEPROM Cell With a Tungsten Finger Coupling Structure by Full CMOS Process.

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Title: Enhanced Performance of Single Poly-Silicon EEPROM Cell With a Tungsten Finger Coupling Structure by Full CMOS Process.
Authors: Chung, Chih-Ping1, Chang-Liao, Kuei-Shu1, Chen, Chun-Yuan1
Source: IEEE Transactions on Electron Devices. Sep2014, Vol. 61 Issue 9, p3075-3080. 6p.
Subjects: Erasable programmable read-only memory, Complementary metal oxide semiconductors, Nonvolatile memory, Polycrystalline silicon, Programmable read-only memory
Abstract: A single poly-silicon electrically erasable programmable read only memory cell with a tungsten finger coupling structure by fully compatible 0.13- \(\mu \) m CMOS process is proposed for the first time in this paper and its performances are compared with the conventional poly-silicon finger coupling cell. Results show that the tungsten finger coupling cell has smaller drain-induced barrier lowering effect, higher coupling ratio, and higher cell current and programming/erasing (P/E) speeds due to its metallic control gate and incremental capacitance from control gate structure. Furthermore, the reliability characteristics in this proposed tungsten finger coupling cell are comparable with poly-silicon finger coupling cell, and its P/E windows are wider during reliability tests. [ABSTRACT FROM PUBLISHER]
Copyright of IEEE Transactions on Electron Devices is the property of IEEE and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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DbLabel: Engineering Source
An: 97616198
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
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  Data: Enhanced Performance of Single Poly-Silicon EEPROM Cell With a Tungsten Finger Coupling Structure by Full CMOS Process.
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  Data: <searchLink fieldCode="AR" term="%22Chung%2C+Chih-Ping%22">Chung, Chih-Ping</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Chang-Liao%2C+Kuei-Shu%22">Chang-Liao, Kuei-Shu</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Chen%2C+Chun-Yuan%22">Chen, Chun-Yuan</searchLink><relatesTo>1</relatesTo>
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  Data: <searchLink fieldCode="JN" term="%22IEEE+Transactions+on+Electron+Devices%22">IEEE Transactions on Electron Devices</searchLink>. Sep2014, Vol. 61 Issue 9, p3075-3080. 6p.
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  Data: <searchLink fieldCode="DE" term="%22Erasable+programmable+read-only+memory%22">Erasable programmable read-only memory</searchLink><br /><searchLink fieldCode="DE" term="%22Complementary+metal+oxide+semiconductors%22">Complementary metal oxide semiconductors</searchLink><br /><searchLink fieldCode="DE" term="%22Nonvolatile+memory%22">Nonvolatile memory</searchLink><br /><searchLink fieldCode="DE" term="%22Polycrystalline+silicon%22">Polycrystalline silicon</searchLink><br /><searchLink fieldCode="DE" term="%22Programmable+read-only+memory%22">Programmable read-only memory</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: A single poly-silicon electrically erasable programmable read only memory cell with a tungsten finger coupling structure by fully compatible 0.13- \(\mu \) m CMOS process is proposed for the first time in this paper and its performances are compared with the conventional poly-silicon finger coupling cell. Results show that the tungsten finger coupling cell has smaller drain-induced barrier lowering effect, higher coupling ratio, and higher cell current and programming/erasing (P/E) speeds due to its metallic control gate and incremental capacitance from control gate structure. Furthermore, the reliability characteristics in this proposed tungsten finger coupling cell are comparable with poly-silicon finger coupling cell, and its P/E windows are wider during reliability tests. [ABSTRACT FROM PUBLISHER]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of IEEE Transactions on Electron Devices is the property of IEEE and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1109/TED.2014.2335614
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      – Code: eng
        Text: English
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        PageCount: 6
        StartPage: 3075
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        Type: general
      – SubjectFull: Complementary metal oxide semiconductors
        Type: general
      – SubjectFull: Nonvolatile memory
        Type: general
      – SubjectFull: Polycrystalline silicon
        Type: general
      – SubjectFull: Programmable read-only memory
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      – TitleFull: Enhanced Performance of Single Poly-Silicon EEPROM Cell With a Tungsten Finger Coupling Structure by Full CMOS Process.
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              M: 09
              Text: Sep2014
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