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Fabrication of uniform and high resolution copper nanowire using intermediate self-assembled monolayers through direct AFM lithography.

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Title: Fabrication of uniform and high resolution copper nanowire using intermediate self-assembled monolayers through direct AFM lithography.
Authors: Kwon, G.1 haiwon@hanyang.ac.kr, Lee, H.1,2,3, Chu, H.2, Yoo, J.2, Kim, H.2, Han, C.4, Chung, C.4, Lee, J.3
Source: Nanotechnology. 5/11/2012, Vol. 23 Issue 18, p1-1. 1p.
Subjects: Nanowires, Copper wire, Copper ions, Atomic force microscopy, Lithography techniques, Electric fields
Abstract: Electrochemical AFM lithography was used to directly fabricate copper nanowires. The copper ions were strongly reduced by a negative sample bias at the point where the AFM tip was localized, and copper metal wires were successfully fabricated following the direction of the electrical field of the bias. A TDA⋅HCl self-assembled monolayer (SAM) was found to play an important role as an intermediate layer for enhancing the capability of high resolution and complete development after the AFM lithographic process. The physical and electrical properties of the wires were analyzed by AFM, EFM, SEM, TEM and I–V measurement. The fabricated copper has promising potential for applications such as masks and interconnectors for nanoelectronic devices. [ABSTRACT FROM AUTHOR]
Copyright of Nanotechnology is the property of IOP Publishing and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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DbLabel: Engineering Source
An: 98022234
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PubTypeId: academicJournal
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Items – Name: Title
  Label: Title
  Group: Ti
  Data: Fabrication of uniform and high resolution copper nanowire using intermediate self-assembled monolayers through direct AFM lithography.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AR" term="%22Kwon%2C+G%2E%22">Kwon, G.</searchLink><relatesTo>1</relatesTo><i> haiwon@hanyang.ac.kr</i><br /><searchLink fieldCode="AR" term="%22Lee%2C+H%2E%22">Lee, H.</searchLink><relatesTo>1,2,3</relatesTo><br /><searchLink fieldCode="AR" term="%22Chu%2C+H%2E%22">Chu, H.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Yoo%2C+J%2E%22">Yoo, J.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Kim%2C+H%2E%22">Kim, H.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Han%2C+C%2E%22">Han, C.</searchLink><relatesTo>4</relatesTo><br /><searchLink fieldCode="AR" term="%22Chung%2C+C%2E%22">Chung, C.</searchLink><relatesTo>4</relatesTo><br /><searchLink fieldCode="AR" term="%22Lee%2C+J%2E%22">Lee, J.</searchLink><relatesTo>3</relatesTo>
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Nanotechnology%22">Nanotechnology</searchLink>. 5/11/2012, Vol. 23 Issue 18, p1-1. 1p.
– Name: Subject
  Label: Subjects
  Group: Su
  Data: <searchLink fieldCode="DE" term="%22Nanowires%22">Nanowires</searchLink><br /><searchLink fieldCode="DE" term="%22Copper+wire%22">Copper wire</searchLink><br /><searchLink fieldCode="DE" term="%22Copper+ions%22">Copper ions</searchLink><br /><searchLink fieldCode="DE" term="%22Atomic+force+microscopy%22">Atomic force microscopy</searchLink><br /><searchLink fieldCode="DE" term="%22Lithography+techniques%22">Lithography techniques</searchLink><br /><searchLink fieldCode="DE" term="%22Electric+fields%22">Electric fields</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: Electrochemical AFM lithography was used to directly fabricate copper nanowires. The copper ions were strongly reduced by a negative sample bias at the point where the AFM tip was localized, and copper metal wires were successfully fabricated following the direction of the electrical field of the bias. A TDA⋅HCl self-assembled monolayer (SAM) was found to play an important role as an intermediate layer for enhancing the capability of high resolution and complete development after the AFM lithographic process. The physical and electrical properties of the wires were analyzed by AFM, EFM, SEM, TEM and I–V measurement. The fabricated copper has promising potential for applications such as masks and interconnectors for nanoelectronic devices. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Nanotechnology is the property of IOP Publishing and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1088/0957-4484/23/18/185307
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 1
        StartPage: 1
    Subjects:
      – SubjectFull: Nanowires
        Type: general
      – SubjectFull: Copper wire
        Type: general
      – SubjectFull: Copper ions
        Type: general
      – SubjectFull: Atomic force microscopy
        Type: general
      – SubjectFull: Lithography techniques
        Type: general
      – SubjectFull: Electric fields
        Type: general
    Titles:
      – TitleFull: Fabrication of uniform and high resolution copper nanowire using intermediate self-assembled monolayers through direct AFM lithography.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Kwon, G.
      – PersonEntity:
          Name:
            NameFull: Lee, H.
      – PersonEntity:
          Name:
            NameFull: Chu, H.
      – PersonEntity:
          Name:
            NameFull: Yoo, J.
      – PersonEntity:
          Name:
            NameFull: Kim, H.
      – PersonEntity:
          Name:
            NameFull: Han, C.
      – PersonEntity:
          Name:
            NameFull: Chung, C.
      – PersonEntity:
          Name:
            NameFull: Lee, J.
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 11
              M: 05
              Text: 5/11/2012
              Type: published
              Y: 2012
          Identifiers:
            – Type: issn-print
              Value: 09574484
          Numbering:
            – Type: volume
              Value: 23
            – Type: issue
              Value: 18
          Titles:
            – TitleFull: Nanotechnology
              Type: main
ResultId 1