Effect of N2/Ar flow ratio on the structural and electrical properties of SrHfON thin films prepared by magnetron sputtering.
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| Title: | Effect of N2/Ar flow ratio on the structural and electrical properties of SrHfON thin films prepared by magnetron sputtering. |
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| Authors: | Tian, Hao1, Feng, Li-ping1 lpfeng@nwpu.edu.cn, Liu, Zheng-tang1 |
| Source: | Vacuum. Nov2014, Vol. 109, p139-143. 5p. |
| Subjects: | Magnetron sputtering, Thin films, Radio frequency, X-ray spectroscopy, Crystallization, Permittivity |
| Abstract: | SrHfON thin films were prepared by radio frequency (RF) magnetron reactive co-sputtering under various N 2 /Ar flow ratio in the range from 0.20 to 0.50. The effect of N 2 /Ar flow ratio on the deposition rate, composition, structure and electrical properties of the sputtered SrHfON films has been investigated using X-ray spectroscopy (XPS), grazing incidence X-ray diffraction (GI-XRD), leakage current density–voltage (J-V) and capacitance–voltage (C–V) measurements. The results show that the properties of the SrHfON films were greatly affected by the N 2 /Ar flow ratio. The deposition rate of the SrHfON films was found to decrease with the increasing N 2 /Ar flow ratio. The SrHfON films exhibited local crystallization when the N 2 /Ar flow ratio is low (<0.33) while the SrHfON films were amorphous when the N 2 /Ar flow ratio is high (>0.33). The average leakage current density of the SrHfON films decreases initially and then increases with the increasing N 2 /Ar flow ratio. Contrarily, the dielectric constant ( k ) of the SrHfON films increases firstly and then decrease with the increasing N 2 /Ar flow ratio. Moreover, both the flat-band voltage shift and fixed positive charge densities were decreased initially and then increased with the increase of N 2 /Ar flow ratio. [ABSTRACT FROM AUTHOR] |
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| Database: | Engineering Source |
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