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Hierarchical methods to improve the performance of the SiC-FET as SO2 sensors in flue gas desulphurization systems.

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Title: Hierarchical methods to improve the performance of the SiC-FET as SO2 sensors in flue gas desulphurization systems.
Authors: Darmastuti, Z.1 zhada@ifm.liu.se, Bur, C.1,2, Lindqvist, N.3, Andersson, M.1, Schütze, A.2, Spetz, A. Lloyd1
Source: Sensors & Actuators B: Chemical. Jan2015, Vol. 206, p609-616. 8p.
Subjects: Silicon carbide, Silica, Chemical detectors, Flue gas desulfurization, Field-effect transistors
Abstract: Experiments were performed both in the laboratory and a desulfurization pilot unit in order to improve the SiC-FET sensor performance using two-step data evaluation. In both cases, a porous Pt-gate enhancement type SiC-FET was utilized in a temperature cycled operation (TCO). Liner Discriminant Analysis (LDA) was chosen as the method for multivariate data analysis. Hierarchical methods with two-step LDA worked quite well in the laboratory tests with SO 2 concentrations varied from 25 to 200 ppm. The same data evaluation was also applied to tests in the desulfurization pilot unit, with higher gas flow and a larger SO 2 concentration range (up to 5000 ppm). The results from the SO 2 quantification showed a significantly improved fit to corresponding reference instrument (FTIR) values. [ABSTRACT FROM AUTHOR]
Copyright of Sensors & Actuators B: Chemical is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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DbLabel: Engineering Source
An: 99508188
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
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  Data: Hierarchical methods to improve the performance of the SiC-FET as SO2 sensors in flue gas desulphurization systems.
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  Data: <searchLink fieldCode="JN" term="%22Sensors+%26+Actuators+B%3A+Chemical%22">Sensors & Actuators B: Chemical</searchLink>. Jan2015, Vol. 206, p609-616. 8p.
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  Data: <searchLink fieldCode="DE" term="%22Silicon+carbide%22">Silicon carbide</searchLink><br /><searchLink fieldCode="DE" term="%22Silica%22">Silica</searchLink><br /><searchLink fieldCode="DE" term="%22Chemical+detectors%22">Chemical detectors</searchLink><br /><searchLink fieldCode="DE" term="%22Flue+gas+desulfurization%22">Flue gas desulfurization</searchLink><br /><searchLink fieldCode="DE" term="%22Field-effect+transistors%22">Field-effect transistors</searchLink>
– Name: Abstract
  Label: Abstract
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  Data: Experiments were performed both in the laboratory and a desulfurization pilot unit in order to improve the SiC-FET sensor performance using two-step data evaluation. In both cases, a porous Pt-gate enhancement type SiC-FET was utilized in a temperature cycled operation (TCO). Liner Discriminant Analysis (LDA) was chosen as the method for multivariate data analysis. Hierarchical methods with two-step LDA worked quite well in the laboratory tests with SO 2 concentrations varied from 25 to 200 ppm. The same data evaluation was also applied to tests in the desulfurization pilot unit, with higher gas flow and a larger SO 2 concentration range (up to 5000 ppm). The results from the SO 2 quantification showed a significantly improved fit to corresponding reference instrument (FTIR) values. [ABSTRACT FROM AUTHOR]
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  Data: <i>Copyright of Sensors & Actuators B: Chemical is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1016/j.snb.2014.09.113
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        Text: English
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        Type: general
      – SubjectFull: Silica
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      – SubjectFull: Chemical detectors
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              Text: Jan2015
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