View in EDS

Experimental developments of A2RAM memory cells on SOI and bulk substrates.

Saved in:
Bibliographic Details
Title: Experimental developments of A2RAM memory cells on SOI and bulk substrates.
Authors: Rodriguez, Noel1 noel@ugr.es, Gamiz, Francisco1, Navarro, Carlos1, Marquez, Carlos1, Andrieu, François2, Faynot, Olivier2, Cristoloveanu, Sorin3
Source: Solid-State Electronics. Jan2015, Vol. 103, p7-14. 8p.
Subjects: Random access memory, Silicon-on-insulator technology, Bulk solids, Substrates (Materials science), Microfabrication, Electrons
Abstract: A2RAM prototype devices have been demonstrated in both SOI and bulk technologies. The fabrication process has successfully achieved the characteristic retrograde doping profile of the channel which allows the coexistence of electrons and holes in the same body while maintaining low-voltage single-gate operation. The different prototypes have been electrically characterized, all of them exhibiting memory effect. The SOI samples present the best performance, showing very attractive current margin between states, competitive retention time, reasonable variability, immunity to disturbance events and no endurance issues even in the short-channel devices fabricated in the most advanced 22 nm process. [ABSTRACT FROM AUTHOR]
Copyright of Solid-State Electronics is the property of Pergamon Press - An Imprint of Elsevier Science and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
FullText Text:
  Availability: 0
Header DbId: egs
DbLabel: Engineering Source
An: 99696862
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
IllustrationInfo
Items – Name: Title
  Label: Title
  Group: Ti
  Data: Experimental developments of A2RAM memory cells on SOI and bulk substrates.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AR" term="%22Rodriguez%2C+Noel%22">Rodriguez, Noel</searchLink><relatesTo>1</relatesTo><i> noel@ugr.es</i><br /><searchLink fieldCode="AR" term="%22Gamiz%2C+Francisco%22">Gamiz, Francisco</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Navarro%2C+Carlos%22">Navarro, Carlos</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Marquez%2C+Carlos%22">Marquez, Carlos</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Andrieu%2C+François%22">Andrieu, François</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Faynot%2C+Olivier%22">Faynot, Olivier</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Cristoloveanu%2C+Sorin%22">Cristoloveanu, Sorin</searchLink><relatesTo>3</relatesTo>
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Solid-State+Electronics%22">Solid-State Electronics</searchLink>. Jan2015, Vol. 103, p7-14. 8p.
– Name: Subject
  Label: Subjects
  Group: Su
  Data: <searchLink fieldCode="DE" term="%22Random+access+memory%22">Random access memory</searchLink><br /><searchLink fieldCode="DE" term="%22Silicon-on-insulator+technology%22">Silicon-on-insulator technology</searchLink><br /><searchLink fieldCode="DE" term="%22Bulk+solids%22">Bulk solids</searchLink><br /><searchLink fieldCode="DE" term="%22Substrates+%28Materials+science%29%22">Substrates (Materials science)</searchLink><br /><searchLink fieldCode="DE" term="%22Microfabrication%22">Microfabrication</searchLink><br /><searchLink fieldCode="DE" term="%22Electrons%22">Electrons</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: A2RAM prototype devices have been demonstrated in both SOI and bulk technologies. The fabrication process has successfully achieved the characteristic retrograde doping profile of the channel which allows the coexistence of electrons and holes in the same body while maintaining low-voltage single-gate operation. The different prototypes have been electrically characterized, all of them exhibiting memory effect. The SOI samples present the best performance, showing very attractive current margin between states, competitive retention time, reasonable variability, immunity to disturbance events and no endurance issues even in the short-channel devices fabricated in the most advanced 22 nm process. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Solid-State Electronics is the property of Pergamon Press - An Imprint of Elsevier Science and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=egs&AN=99696862
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1016/j.sse.2014.09.001
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 8
        StartPage: 7
    Subjects:
      – SubjectFull: Random access memory
        Type: general
      – SubjectFull: Silicon-on-insulator technology
        Type: general
      – SubjectFull: Bulk solids
        Type: general
      – SubjectFull: Substrates (Materials science)
        Type: general
      – SubjectFull: Microfabrication
        Type: general
      – SubjectFull: Electrons
        Type: general
    Titles:
      – TitleFull: Experimental developments of A2RAM memory cells on SOI and bulk substrates.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Rodriguez, Noel
      – PersonEntity:
          Name:
            NameFull: Gamiz, Francisco
      – PersonEntity:
          Name:
            NameFull: Navarro, Carlos
      – PersonEntity:
          Name:
            NameFull: Marquez, Carlos
      – PersonEntity:
          Name:
            NameFull: Andrieu, François
      – PersonEntity:
          Name:
            NameFull: Faynot, Olivier
      – PersonEntity:
          Name:
            NameFull: Cristoloveanu, Sorin
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 01
              M: 01
              Text: Jan2015
              Type: published
              Y: 2015
          Identifiers:
            – Type: issn-print
              Value: 00381101
          Numbering:
            – Type: volume
              Value: 103
          Titles:
            – TitleFull: Solid-State Electronics
              Type: main
ResultId 1