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Impurity Gettering in Polycrystalline‐Silicon Based Passivating Contacts—The Role of Oxide Stoichiometry and Pinholes.

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Title: Impurity Gettering in Polycrystalline‐Silicon Based Passivating Contacts—The Role of Oxide Stoichiometry and Pinholes.
Authors: Yang, Zhongshu1 (AUTHOR) zhongshu.yang@anu.edu.au, Krügener, Jan2 (AUTHOR), Feldmann, Frank3 (AUTHOR), Polzin, Jana‐Isabelle3 (AUTHOR), Steinhauser, Bernd3 (AUTHOR), Le, Tien T.1 (AUTHOR), Macdonald, Daniel1 (AUTHOR), Liu, AnYao1 (AUTHOR) anyao.liu@anu.edu.au
Source: Advanced Energy Materials. 6/23/2022, Vol. 12 Issue 24, p1-11. 11p.
Subject Terms: *Polycrystalline silicon, *Gettering, *Passivation, *Solar cell efficiency, *Diffusion barriers, *Stoichiometry, *Surface passivation
Abstract: Polycrystalline‐silicon/oxide (poly‐Si/SiOx) passivating contacts for high efficiency solar cells exhibit excellent surface passivation, carrier selectivity, and impurity gettering effects. However, the ultrathin SiOx interlayer can act as a diffusion barrier for metal impurities and this potentially slows down the overall gettering rate of the poly‐Si/SiOx structures. Herein, the factors that determine the blocking effects of the SiOx interlayers are identified and investigated by examining two general types of the SiOx interlayers: 1.3 nm ultrathin tunneling SiOx with negligible pinholes and 2.5 nm SiOx with thermally created pinholes. Iron is used as tracer impurity in silicon to quantify the gettering rate. By fitting the experimental gettering kinetics by a diffusion‐limited segregation gettering model, the blocking effects of the SiOx interlayers are quantified by a transport parameter. Both the oxide stoichiometry and pinhole density affect the effective transport of iron through SiOx interlayers. The oxide stoichiometry depends strongly on the oxidation method, while the pinhole density is affected by the activation temperature, doping concentration, doping technique, and possibly the dopant type as well. To enable a fast gettering process during typical high‐temperature formation of the poly‐Si/SiOx structures, a SiOx interlayer that is less stoichiometric or with a higher pinhole density is preferred. [ABSTRACT FROM AUTHOR]
Database: Energy & Power Source
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DbLabel: Energy & Power Source
An: 157616539
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PubTypeId: academicJournal
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  Label: Title
  Group: Ti
  Data: Impurity Gettering in Polycrystalline‐Silicon Based Passivating Contacts—The Role of Oxide Stoichiometry and Pinholes.
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  Data: <searchLink fieldCode="AR" term="%22Yang%2C+Zhongshu%22">Yang, Zhongshu</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> zhongshu.yang@anu.edu.au</i><br /><searchLink fieldCode="AR" term="%22Krügener%2C+Jan%22">Krügener, Jan</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Feldmann%2C+Frank%22">Feldmann, Frank</searchLink><relatesTo>3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Polzin%2C+Jana‐Isabelle%22">Polzin, Jana‐Isabelle</searchLink><relatesTo>3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Steinhauser%2C+Bernd%22">Steinhauser, Bernd</searchLink><relatesTo>3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Le%2C+Tien+T%2E%22">Le, Tien T.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Macdonald%2C+Daniel%22">Macdonald, Daniel</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Liu%2C+AnYao%22">Liu, AnYao</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> anyao.liu@anu.edu.au</i>
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  Data: <searchLink fieldCode="JN" term="%22Advanced+Energy+Materials%22">Advanced Energy Materials</searchLink>. 6/23/2022, Vol. 12 Issue 24, p1-11. 11p.
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  Data: *<searchLink fieldCode="DE" term="%22Polycrystalline+silicon%22">Polycrystalline silicon</searchLink><br />*<searchLink fieldCode="DE" term="%22Gettering%22">Gettering</searchLink><br />*<searchLink fieldCode="DE" term="%22Passivation%22">Passivation</searchLink><br />*<searchLink fieldCode="DE" term="%22Solar+cell+efficiency%22">Solar cell efficiency</searchLink><br />*<searchLink fieldCode="DE" term="%22Diffusion+barriers%22">Diffusion barriers</searchLink><br />*<searchLink fieldCode="DE" term="%22Stoichiometry%22">Stoichiometry</searchLink><br />*<searchLink fieldCode="DE" term="%22Surface+passivation%22">Surface passivation</searchLink>
– Name: Abstract
  Label: Abstract
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  Data: Polycrystalline‐silicon/oxide (poly‐Si/SiOx) passivating contacts for high efficiency solar cells exhibit excellent surface passivation, carrier selectivity, and impurity gettering effects. However, the ultrathin SiOx interlayer can act as a diffusion barrier for metal impurities and this potentially slows down the overall gettering rate of the poly‐Si/SiOx structures. Herein, the factors that determine the blocking effects of the SiOx interlayers are identified and investigated by examining two general types of the SiOx interlayers: 1.3 nm ultrathin tunneling SiOx with negligible pinholes and 2.5 nm SiOx with thermally created pinholes. Iron is used as tracer impurity in silicon to quantify the gettering rate. By fitting the experimental gettering kinetics by a diffusion‐limited segregation gettering model, the blocking effects of the SiOx interlayers are quantified by a transport parameter. Both the oxide stoichiometry and pinhole density affect the effective transport of iron through SiOx interlayers. The oxide stoichiometry depends strongly on the oxidation method, while the pinhole density is affected by the activation temperature, doping concentration, doping technique, and possibly the dopant type as well. To enable a fast gettering process during typical high‐temperature formation of the poly‐Si/SiOx structures, a SiOx interlayer that is less stoichiometric or with a higher pinhole density is preferred. [ABSTRACT FROM AUTHOR]
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RecordInfo BibRecord:
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        Value: 10.1002/aenm.202103773
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      – Code: eng
        Text: English
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      Pagination:
        PageCount: 11
        StartPage: 1
    Subjects:
      – SubjectFull: Polycrystalline silicon
        Type: general
      – SubjectFull: Gettering
        Type: general
      – SubjectFull: Passivation
        Type: general
      – SubjectFull: Solar cell efficiency
        Type: general
      – SubjectFull: Diffusion barriers
        Type: general
      – SubjectFull: Stoichiometry
        Type: general
      – SubjectFull: Surface passivation
        Type: general
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      – TitleFull: Impurity Gettering in Polycrystalline‐Silicon Based Passivating Contacts—The Role of Oxide Stoichiometry and Pinholes.
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            – D: 23
              M: 06
              Text: 6/23/2022
              Type: published
              Y: 2022
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            – TitleFull: Advanced Energy Materials
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