Design and Performance Optimization of a Nonvolatile Silicon Photonic Switch Using GST-Integrated Concentric Microring Resonators.
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| Title: | Design and Performance Optimization of a Nonvolatile Silicon Photonic Switch Using GST-Integrated Concentric Microring Resonators. |
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| Authors: | Zhu, Bingda1 (AUTHOR), Guo, Lijun1 (AUTHOR) guolijun0915@163.com, Feng, Yuan1,2 (AUTHOR) |
| Source: | Semiconductors. Feb2026, Vol. 60 Issue 2, p177-184. 8p. |
| Subject Terms: | *Optical switches, *Insertion loss (Telecommunication), *Phase change memory, *Optical switching, *Optical modulators, *Attenuation of light |
| Abstract: | This study presents a silicon-based concentric ring optical switch utilizing Ge2Sb2Te5 (GST) phase-change material. The device featured a double-ring resonator structure with an outer ring radius of 5 μm, an inner ring radius of 4.2 μm, and a waveguide width of 400 nm. Through optimization of the coupling gap (210 nm) and GST coverage (8 segments), the device achieved high-performance optical switching functionality at the 1550 nm wavelength, exhibiting a high extinction ratio of 26.4 dB in the amorphous state and a low insertion loss of 0.95 dB in the crystalline state. Comparative analysis revealed significant advantages over conventional silicon-based optical switches: (1) Non-volatile operation enabled by GST phase transition eliminates the need for continuous power supply after switching; (2) High refractive index contrast (Δn > 2) ensures strong optical modulation; (3) Compact structure (5 μm outer radius) facilitates high-density integration. Furthermore, compared to devices using GSST material, the GST-based design showed a 12 dB improvement in extinction ratio and a 1.76 dB reduction in insertion loss. This research presents a novel approach to developing high-performance, low-power photonic integrated devices. [ABSTRACT FROM AUTHOR] |
| Database: | Energy & Power Source |
| FullText | Text: Availability: 0 |
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| Header | DbId: enr DbLabel: Energy & Power Source An: 191605097 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Design and Performance Optimization of a Nonvolatile Silicon Photonic Switch Using GST-Integrated Concentric Microring Resonators. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Zhu%2C+Bingda%22">Zhu, Bingda</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Guo%2C+Lijun%22">Guo, Lijun</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> guolijun0915@163.com</i><br /><searchLink fieldCode="AR" term="%22Feng%2C+Yuan%22">Feng, Yuan</searchLink><relatesTo>1,2</relatesTo> (AUTHOR) – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Semiconductors%22">Semiconductors</searchLink>. Feb2026, Vol. 60 Issue 2, p177-184. 8p. – Name: Subject Label: Subject Terms Group: Su Data: *<searchLink fieldCode="DE" term="%22Optical+switches%22">Optical switches</searchLink><br />*<searchLink fieldCode="DE" term="%22Insertion+loss+%28Telecommunication%29%22">Insertion loss (Telecommunication)</searchLink><br />*<searchLink fieldCode="DE" term="%22Phase+change+memory%22">Phase change memory</searchLink><br />*<searchLink fieldCode="DE" term="%22Optical+switching%22">Optical switching</searchLink><br />*<searchLink fieldCode="DE" term="%22Optical+modulators%22">Optical modulators</searchLink><br />*<searchLink fieldCode="DE" term="%22Attenuation+of+light%22">Attenuation of light</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: This study presents a silicon-based concentric ring optical switch utilizing Ge2Sb2Te5 (GST) phase-change material. The device featured a double-ring resonator structure with an outer ring radius of 5 μm, an inner ring radius of 4.2 μm, and a waveguide width of 400 nm. Through optimization of the coupling gap (210 nm) and GST coverage (8 segments), the device achieved high-performance optical switching functionality at the 1550 nm wavelength, exhibiting a high extinction ratio of 26.4 dB in the amorphous state and a low insertion loss of 0.95 dB in the crystalline state. Comparative analysis revealed significant advantages over conventional silicon-based optical switches: (1) Non-volatile operation enabled by GST phase transition eliminates the need for continuous power supply after switching; (2) High refractive index contrast (Δn > 2) ensures strong optical modulation; (3) Compact structure (5 μm outer radius) facilitates high-density integration. Furthermore, compared to devices using GSST material, the GST-based design showed a 12 dB improvement in extinction ratio and a 1.76 dB reduction in insertion loss. This research presents a novel approach to developing high-performance, low-power photonic integrated devices. [ABSTRACT FROM AUTHOR] |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1134/S1063782625601736 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 8 StartPage: 177 Subjects: – SubjectFull: Optical switches Type: general – SubjectFull: Insertion loss (Telecommunication) Type: general – SubjectFull: Phase change memory Type: general – SubjectFull: Optical switching Type: general – SubjectFull: Optical modulators Type: general – SubjectFull: Attenuation of light Type: general Titles: – TitleFull: Design and Performance Optimization of a Nonvolatile Silicon Photonic Switch Using GST-Integrated Concentric Microring Resonators. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Zhu, Bingda – PersonEntity: Name: NameFull: Guo, Lijun – PersonEntity: Name: NameFull: Feng, Yuan IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 02 Text: Feb2026 Type: published Y: 2026 Identifiers: – Type: issn-print Value: 10637826 Numbering: – Type: volume Value: 60 – Type: issue Value: 2 Titles: – TitleFull: Semiconductors Type: main |
| ResultId | 1 |
