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High-Q Shear Mode ZnO-based Film Bulk Acoustic Resonators with Air Cavity for Liquid-Phase Sensing Applications.

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Title: High-Q Shear Mode ZnO-based Film Bulk Acoustic Resonators with Air Cavity for Liquid-Phase Sensing Applications.
Authors: Takuli, Aditya Pratap Singh1 (AUTHOR), Patel, Raju1 (AUTHOR) raju.patel@vit.ac.in, Majumder, Tanmoy2 (AUTHOR), Adhikari, Manoj Singh3 (AUTHOR), Bansal, Deepak4 (AUTHOR)
Source: Semiconductors. Apr2026, Vol. 60 Issue 4, p420-430. 11p.
Subject Terms: *Radiofrequency sputtering, *Biosensors, *Surface morphology, *Air gap (Engineering), *Finite element method
Abstract: In recent years, demand has surged for liquid-phase sensors in the healthcare industry, enabling remote early diagnosis, testing, and monitoring of patients. Acoustic sensors have become the most efficient solution for bio-sensing due to their unique characteristics, such as high sensitivity, small size, low power requirement, high specificity, high selectivity, high stability, low cost, and low insertion loss. Therefore, this paper presents a comprehensive two-dimensional finite element analysis (FEA) of shear-mode film bulk acoustic resonators (FBARs) to optimize their performance for liquid detection. The radio frequency (RF) measurement of a shear-mode acoustic resonator has been performed for the fabricated device. The bulk zinc oxide was deposited on the oxide support layer using the RF sputtering method. Further, a pair of coplanar gold electrodes was deposited on the ZnO layer. The surface morphology of bulk ZnO have been studied using Field Emission Scanning Electron Microscopy (FESEM) and atomic force microscopy (AFM) techniques. The surface roughness and grain size of ZnO grown on SiO2 layer has been estimated to be 5.2 nm and 114 nm, respectively. The return loss spectra depict that the resonator has a central frequency (f0) of 2 GHz with –3 dB bandwidth (1.0386 MHz) and a return loss (S11) of –15.72 dB. [ABSTRACT FROM AUTHOR]
Database: Energy & Power Source
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Header DbId: enr
DbLabel: Energy & Power Source
An: 192963039
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Label: Title
  Group: Ti
  Data: High-Q Shear Mode ZnO-based Film Bulk Acoustic Resonators with Air Cavity for Liquid-Phase Sensing Applications.
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  Data: <searchLink fieldCode="AR" term="%22Takuli%2C+Aditya+Pratap+Singh%22">Takuli, Aditya Pratap Singh</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Patel%2C+Raju%22">Patel, Raju</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> raju.patel@vit.ac.in</i><br /><searchLink fieldCode="AR" term="%22Majumder%2C+Tanmoy%22">Majumder, Tanmoy</searchLink><relatesTo>2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Adhikari%2C+Manoj+Singh%22">Adhikari, Manoj Singh</searchLink><relatesTo>3</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Bansal%2C+Deepak%22">Bansal, Deepak</searchLink><relatesTo>4</relatesTo> (AUTHOR)
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  Data: <searchLink fieldCode="JN" term="%22Semiconductors%22">Semiconductors</searchLink>. Apr2026, Vol. 60 Issue 4, p420-430. 11p.
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  Data: *<searchLink fieldCode="DE" term="%22Radiofrequency+sputtering%22">Radiofrequency sputtering</searchLink><br />*<searchLink fieldCode="DE" term="%22Biosensors%22">Biosensors</searchLink><br />*<searchLink fieldCode="DE" term="%22Surface+morphology%22">Surface morphology</searchLink><br />*<searchLink fieldCode="DE" term="%22Air+gap+%28Engineering%29%22">Air gap (Engineering)</searchLink><br />*<searchLink fieldCode="DE" term="%22Finite+element+method%22">Finite element method</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: In recent years, demand has surged for liquid-phase sensors in the healthcare industry, enabling remote early diagnosis, testing, and monitoring of patients. Acoustic sensors have become the most efficient solution for bio-sensing due to their unique characteristics, such as high sensitivity, small size, low power requirement, high specificity, high selectivity, high stability, low cost, and low insertion loss. Therefore, this paper presents a comprehensive two-dimensional finite element analysis (FEA) of shear-mode film bulk acoustic resonators (FBARs) to optimize their performance for liquid detection. The radio frequency (RF) measurement of a shear-mode acoustic resonator has been performed for the fabricated device. The bulk zinc oxide was deposited on the oxide support layer using the RF sputtering method. Further, a pair of coplanar gold electrodes was deposited on the ZnO layer. The surface morphology of bulk ZnO have been studied using Field Emission Scanning Electron Microscopy (FESEM) and atomic force microscopy (AFM) techniques. The surface roughness and grain size of ZnO grown on SiO2 layer has been estimated to be 5.2 nm and 114 nm, respectively. The return loss spectra depict that the resonator has a central frequency (f0) of 2 GHz with –3 dB bandwidth (1.0386 MHz) and a return loss (S11) of –15.72 dB. [ABSTRACT FROM AUTHOR]
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=enr&AN=192963039
RecordInfo BibRecord:
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      – Type: doi
        Value: 10.1134/S1063782625604522
    Languages:
      – Code: eng
        Text: English
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        PageCount: 11
        StartPage: 420
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      – SubjectFull: Radiofrequency sputtering
        Type: general
      – SubjectFull: Biosensors
        Type: general
      – SubjectFull: Surface morphology
        Type: general
      – SubjectFull: Air gap (Engineering)
        Type: general
      – SubjectFull: Finite element method
        Type: general
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      – TitleFull: High-Q Shear Mode ZnO-based Film Bulk Acoustic Resonators with Air Cavity for Liquid-Phase Sensing Applications.
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            NameFull: Takuli, Aditya Pratap Singh
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            NameFull: Patel, Raju
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            NameFull: Majumder, Tanmoy
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            NameFull: Adhikari, Manoj Singh
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            NameFull: Bansal, Deepak
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            – D: 01
              M: 04
              Text: Apr2026
              Type: published
              Y: 2026
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              Value: 60
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              Value: 4
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            – TitleFull: Semiconductors
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