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Transforming Device Efficiency and Stability in NiO‐Sputtered n–i–p Perovskite Solar Cells by Soft‐Landing and a Thin Spiro‐OMeTAD Buffer Layer.

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Title: Transforming Device Efficiency and Stability in NiO‐Sputtered n–i–p Perovskite Solar Cells by Soft‐Landing and a Thin Spiro‐OMeTAD Buffer Layer.
Authors: Basak, Susmita1 (AUTHOR), Sharma, Rajat1 (AUTHOR), Pariari, Debasmita2 (AUTHOR), Sarda, Nisha1 (AUTHOR), Ghosh, Sudeshna3 (AUTHOR), Ghosh, Subhashis4 (AUTHOR), Vidhan, Arya1 (AUTHOR), Baghel, Niranjan Singh1 (AUTHOR), Senanayak, Satyaprasad P.4 (AUTHOR), Boix, Pablo P.5 (AUTHOR), Mora‐Seró, Iván6 (AUTHOR), Sarma, D. D.2 (AUTHOR) sarma.dd@gmail.com, Sarkar, Shaibal K.1 (AUTHOR) shaibal.sarkar@iitb.ac.in
Source: Advanced Energy Materials. 4/22/2026, Vol. 16 Issue 16, p1-12. 12p.
Subject Terms: *Nickel oxide, *Sputtering (Physics), *Durability, *Solar cells, *Inorganic chemistry, *Solar cell efficiency
Abstract: The integration of inorganic materials in perovskite solar cells (PSCs) is critical for enhancing long‐term operational stability, scalability, and economic viability. Here, we demonstrate the transformational efficacy of using a modified protocol for sputtered nickel oxide as a hole transport layer (HTL) in n–i–p structured PSCs, in conjunction with a thin Spiro‐OMeTAD buffer layer. The introduction of a biased grid and a buffer interface enable us to achieve a soft landing of NiO on the halide perovskite, thereby minimizing process‐induced interfacial damage. Our results indicate that the buffer layer serves solely as an interfacial protection layer, rather than as a functional HTL. Using this approach, we report champion power conversion efficiencies of 23.45% (mean ≈22.2%) on rigid glass substrates and 22.1% (mean ≈21%) on flexible ITO‐coated PET substrates, both employing fully inorganic charge transport layers. These results represent unprecedented enhancements over previously reported highest PCE values (<12%) for n‐i‐p devices using sputtered NiO as the HTL, placing them on par with p‐i‐n architectures that utilize a combination of NiO and organic HTLs. This work demonstrates a scalable, commercially viable pathway toward high‐efficiency, stable perovskite photovoltaics based solely on sputtered inorganic layers, offering a competitive edge for further development. [ABSTRACT FROM AUTHOR]
Database: Energy & Power Source
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DbLabel: Energy & Power Source
An: 193231309
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
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  Data: Transforming Device Efficiency and Stability in NiO‐Sputtered n–i–p Perovskite Solar Cells by Soft‐Landing and a Thin Spiro‐OMeTAD Buffer Layer.
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  Data: &lt;searchLink fieldCode=&quot;JN&quot; term=&quot;%22Advanced+Energy+Materials%22&quot;&gt;Advanced Energy Materials&lt;/searchLink&gt;. 4/22/2026, Vol. 16 Issue 16, p1-12. 12p.
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  Data: *&lt;searchLink fieldCode=&quot;DE&quot; term=&quot;%22Nickel+oxide%22&quot;&gt;Nickel oxide&lt;/searchLink&gt;&lt;br /&gt;*&lt;searchLink fieldCode=&quot;DE&quot; term=&quot;%22Sputtering+%28Physics%29%22&quot;&gt;Sputtering (Physics)&lt;/searchLink&gt;&lt;br /&gt;*&lt;searchLink fieldCode=&quot;DE&quot; term=&quot;%22Durability%22&quot;&gt;Durability&lt;/searchLink&gt;&lt;br /&gt;*&lt;searchLink fieldCode=&quot;DE&quot; term=&quot;%22Solar+cells%22&quot;&gt;Solar cells&lt;/searchLink&gt;&lt;br /&gt;*&lt;searchLink fieldCode=&quot;DE&quot; term=&quot;%22Inorganic+chemistry%22&quot;&gt;Inorganic chemistry&lt;/searchLink&gt;&lt;br /&gt;*&lt;searchLink fieldCode=&quot;DE&quot; term=&quot;%22Solar+cell+efficiency%22&quot;&gt;Solar cell efficiency&lt;/searchLink&gt;
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: The integration of inorganic materials in perovskite solar cells (PSCs) is critical for enhancing long‐term operational stability, scalability, and economic viability. Here, we demonstrate the transformational efficacy of using a modified protocol for sputtered nickel oxide as a hole transport layer (HTL) in n–i–p structured PSCs, in conjunction with a thin Spiro‐OMeTAD buffer layer. The introduction of a biased grid and a buffer interface enable us to achieve a soft landing of NiO on the halide perovskite, thereby minimizing process‐induced interfacial damage. Our results indicate that the buffer layer serves solely as an interfacial protection layer, rather than as a functional HTL. Using this approach, we report champion power conversion efficiencies of 23.45% (mean ≈22.2%) on rigid glass substrates and 22.1% (mean ≈21%) on flexible ITO‐coated PET substrates, both employing fully inorganic charge transport layers. These results represent unprecedented enhancements over previously reported highest PCE values (&lt;12%) for n‐i‐p devices using sputtered NiO as the HTL, placing them on par with p‐i‐n architectures that utilize a combination of NiO and organic HTLs. This work demonstrates a scalable, commercially viable pathway toward high‐efficiency, stable perovskite photovoltaics based solely on sputtered inorganic layers, offering a competitive edge for further development. [ABSTRACT FROM AUTHOR]
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=enr&AN=193231309
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      – Type: doi
        Value: 10.1002/aenm.202503291
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      – Code: eng
        Text: English
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        PageCount: 12
        StartPage: 1
    Subjects:
      – SubjectFull: Nickel oxide
        Type: general
      – SubjectFull: Sputtering (Physics)
        Type: general
      – SubjectFull: Durability
        Type: general
      – SubjectFull: Solar cells
        Type: general
      – SubjectFull: Inorganic chemistry
        Type: general
      – SubjectFull: Solar cell efficiency
        Type: general
    Titles:
      – TitleFull: Transforming Device Efficiency and Stability in NiO‐Sputtered n–i–p Perovskite Solar Cells by Soft‐Landing and a Thin Spiro‐OMeTAD Buffer Layer.
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            – D: 22
              M: 04
              Text: 4/22/2026
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              Y: 2026
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